High current handling OSEN IRF1404PBF 40V N Channel MOSFET with power dissipation rating of 220 watts
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Product Description
Product Overview
The IRF1404PBF is a 40V N-Channel MOSFET designed for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It features fast switching speeds, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. The device has undergone avalanche energy testing.
Product Attributes
- Brand: OSEN
- Model: IRF1404PBF
- Package: TO-220
- Publication Order Number: IRF1404PBF
- Revision: 21.2.1
Technical Specifications
| Parameters | Unit | Ratings | Conditions |
| Drain-Source Voltage (VDSS) | V | 40 | |
| Gate-Source Voltage-Continuous (VGS) | V | 20 | |
| Drain Current-Continuous (ID) | A | 180 | Note 2 |
| Drain Current-Single Pulsed (IDM) | A | 720 | Note 1 |
| Power Dissipation (PD) | W | 220 | Note 2 |
| Max.Operating junction temperature (Tj) | 150 | ||
| Drain-Source Breakdown Voltage (BVDSS) | V | 40 | ID=250AVGS=0VTJ=25C |
| Gate Threshold Voltage (VGS(th)) | V | 2.0 -- 4.0 | VDS=VGSID=250A |
| Drain-Source On-Resistance (RDS(on)) | m | -- 4.6 -- | VGS=10VID=30A |
| Gate-Body Leakage Current (IGSS) | nA | -- -- 100 | VGS=16VVDS=0 |
| Zero Gate Voltage Drain Current (IDSS) | A | -- -- 1 | VDS=40VVGS=0 |
| Forward Transconductance (gfs) | S | 45 -- -- | VDS=40VID=60A |
| Turn-On Delay Time (Td(on)) | ns | -- 155 -- | VDD=20VID=60ARG=4,VGS=5VNote 2 |
| Rise Time (Tr) | ns | -- 720 -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- 53 -- | |
| Fall Time (Tf) | ns | -- 55 -- | |
| Total Gate Charge (Qg) | nC | -- -- 130 | VD=32VGS=5VID=60ANote 2 |
| Gate-Source Charge (Qgs) | nC | -- -- 30 | |
| Gate-Drain Charge (Qgd) | nC | -- -- 50 | |
| Input Capacitance (Ciss) | pF | -- 4500 -- | VDS=25VVGS=0f=1MHz |
| Output Capacitance (Coss) | pF | -- 1550 -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- 150 -- | |
| Continuous Drain-Source Diode Forward Current (IS) | A | -- -- 180 | Note 2 |
| Diode Forward On-Voltage (VSD) | V | -- -- 1.3 | IS=60AVGS=0 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- -- 0.57 |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW
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