N Channel MOSFET OSEN OSP160N03T with Fast Switching Speed and High Current Handling Capability
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The OSP160N03T is an N-Channel Enhancement Mode MOSFET from OSEN. It features fast switching speed, low gate charge, and high power and current handling capability, making it suitable for DC to DC converters and synchronous rectification applications. This product is RoHS compliant.
Product Attributes
- Brand: OSEN
- Origin: http://www.osen.net.cn
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings (Tc=25C) | ||||||
| Drain-Source Voltage (VDSS) | V | 30 | ||||
| Gate-Source Voltage-Continuous (VGS) | V | 20 | ||||
| Drain Current-Continuous (ID) (Note 2) | A | 160 | ||||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 640 | ||||
| Power Dissipation (PD) (Note 2) | W | 145 | ||||
| Max.Operating junction temperature (Tj) | 150 | |||||
| Electrical characteristics (Tc=25C unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | V | ID=250AVGS=0V | 30 | -- | -- | |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 1.0 | 1.6 | 2.5 | |
| Drain-Source On-Resistance (RDS(on)) | m | VGS=10VID=15A | -- | 1.5 | 2.0 | |
| Gate-Body Leakage Current (IGSS) | nA | VGS=20VVDS=0 | -- | -- | 100 | |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=30VVGS=0 | -- | -- | 1 | |
| Forward Transconductance (gfs) | S | VDS=10VID=20A | -- | 45 | -- | |
| Switching Characteristics | ||||||
| Turn-On Delay Time (Td(on)) | ns | VGS=10V, VDS=15V,ID=20A RG=3.5 | -- | 25 | -- | |
| Rise Time (Tr) | ns | -- | 15 | -- | ||
| Turn-Off Delay Time (Td(off)) | ns | -- | 55 | -- | ||
| Fall Time (Tf) | ns | -- | 12 | -- | ||
| Total Gate Charge (Qg) | nC | VDS=15V VGS=10V ID=20A | -- | 155 | -- | |
| Gate-Source Charge (Qgs) | nC | -- | 15 | -- | ||
| Gate-Drain Charge (Qgd) | nC | -- | 32 | -- | ||
| Dynamic Characteristics | ||||||
| Input Capacitance (Ciss) | pF | VDS=20VVGS=0 f=1MHz | -- | 4500 | -- | |
| Output Capacitance (Coss) | pF | -- | 915 | -- | ||
| Reverse Transfer Capacitance (Crss) | pF | -- | 745 | -- | ||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- | -- | 160 | ||
| Diode Forward On-Voltage (VSD) | V | IS=30AVGS=0 | -- | -- | 1.2 | |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- | -- | 0.87 | ||
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