High Current 500V N Channel MOSFET OSEN OSPF25N50 with 100A Pulsed Drain Current and TO 220F Package
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Product Description
OSPF25N50 500V N-CHANNEL MOSFET
The OSPF25N50 is a 500V N-channel MOSFET designed for high-efficiency applications. It features fast switching speed, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF25N50
- Revision: Rev 21.2.10
- Package: TO-220F
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions | |
| VDSS | Drain-Source Voltage | 500 | V | ||
| VGS | Gate-Source Voltage-Continuous | 30 | V | ||
| ID | Drain Current-Continuous (Note 2) | 25 | A | ||
| IDM | Drain Current-Single Pulsed (Note 1) | 100 | A | ||
| PD | Power Dissipation (Note 2) | 85 | W | ||
| Tj Max. | Operating junction temperature | 150 | |||
| BVDSS | Drain-Source Breakdown Voltage (Note 1) | 500 | V | ID=250AVGS=0VTJ=25C | |
| VGS(th) | Gate Threshold Voltage | 2 | 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | 0.20 | VGS=10VID=14A | ||
| IGSS | Gate-Body Leakage Current | 100 | nA | VGS=30VVDS=0 | |
| IDSS | Zero Gate Voltage Drain Current | 1 | A | VDS=500VVGS=0 | |
| gfs | Forward Transconductance | 25 | S | VDS=40VID=10A | |
| Td(on) | Turn-On Delay Time | 40 | ns | VDS=400VID=25ARG=10Note 2 | |
| Tr | Rise Time | 68 | ns | ||
| Td(off) | Turn-Off Delay Time | 88 | ns | ||
| Tf | Fall Time | 44 | ns | ||
| Qg | Total Gate Charge | 65 | nC | VDS=400V VGS=10VID=25ANote 2 | |
| Qgs | Gate-Source Charge | 12 | nC | ||
| Qgd | Gate-Drain Charge | 20 | nC | ||
| Ciss | Input Capacitance | 3500 | pF | VDS=25VVGS=0f=1MHz | |
| Coss | Output Capacitance | 220 | pF | ||
| Crss | Reverse Transfer Capacitance | 12 | pF | ||
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | 25 | A | ||
| VSD | Diode Forward On-Voltage | 1.4 | V | IS=14AVGS=0 | |
| Rth(j-c) | Thermal Resistance, Junction to Case | 1.47 | /W |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW
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