N Channel MOSFET OSEN IRF3205STRLPBF OSEN designed for ruggedness and fast switching in power electronics
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Product Description
Product Overview
The IRF3205STRLPBF-OSEN is a 55V N-Channel MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .cn domain)
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions |
| Drain-Source Voltage | VDSS | 55 | V | |
| Gate-Source Voltage-Continuous | VGS | 20 | V | |
| Drain Current-Continuous | ID | 110 | A | (Note 2) |
| Drain Current-Single Pulsed | IDM | 390 | A | (Note 1) |
| Power Dissipation | PD | 200 | W | (Note 2) |
| Max.Operating junction temperature | Tj Max. | 150 | ||
| Drain-Source Breakdown VoltageCurrent | BVDSS | 55 | V | ID=250A, VGS=0V, TJ=25C (Note 1) |
| Gate Threshold Voltage | VGS(th) | 2.0 -- 4.0 | V | VDS=VGS, ID=250A |
| Drain-Source On-Resistance | RDS(on) | -- 8 -- | m | VGS=10V, ID=10A |
| Gate-Body Leakage Current | IGSS | -- 100 | nA | VGS=20V, VDS=0 |
| Zero Gate Voltage Drain Current | IDSS | -- 1 | A | VDS=55V, VGS=0 |
| Forward Transconductance | gfs | 44 -- -- | S | VDS=25V, ID=62A |
| Turn-On Delay Time | Td(on) | -- 14 -- | ns | VDS=28V, ID=62A, RG=4.5,VGS=10V (Note 2) |
| Rise Time | Tr | -- 101 -- | ns | |
| Turn-Off Delay Time | Td(off) | -- 50 -- | ns | |
| Fall Time | Tf | -- 65 -- | ns | |
| Total Gate Charge | Qg | -- -- 146 | nC | VDS=44, VGS=10V, ID=62A (Note 2) |
| Gate-Source Charge | Qgs | -- -- 35 | nC | |
| Gate-Drain Charge | Qgd | -- -- 54 | nC | |
| Input Capacitance | Ciss | -- 3247 -- | pF | VDS=25V, VGS=0, f=1MHz |
| Output Capacitance | Coss | -- 781 -- | pF | |
| Reverse Transfer Capacitance | Crss | -- 211 -- | pF | |
| Diode Forward Current | IS | -- -- 110 | A | (Note 2) |
| Diode Forward On-Voltage | VSD | -- -- 1.3 | V | IS=60A, VGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | -- -- 0.63 | /W |
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