600V n channel mosfet osen ospf8n60c providing fast switching and rugged performance in power systems
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Product Description
Product Overview
The OSPF8N60 is a 600V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, and low-level drive capabilities, making it suitable for demanding power applications.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF8N60
- Revision: Rev 21.2.10
Technical Specifications
| Parameters | Unit | Ratings | Conditions |
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | V | 600 | |
| Gate-Source Voltage-Continuous (VGS) | V | ±30 | |
| Drain Current-Continuous (ID) (Note 2) | A | 8 | |
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 30 | |
| Power Dissipation (PD) (Note 2) | W | 40 | |
| Max.Operating junction temperature (Tj) | 150 | ||
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | 600 | ID=250µA, VGS=0V, TJ=25°C |
| Gate Threshold Voltage (VGS(th)) | V | 2.0 -- 4.0 | VDS=VGS, ID=250μA |
| Drain-Source On-Resistance (RDS(on)) | Ω | -- 1.08 -- | VGS=10V, ID=4A |
| Gate-Body Leakage Current (IGSS) | nA | -- -- ±100 | VGS=±30V, VDS=0 |
| Zero Gate Voltage Drain Current (IDSS) | µA | -- -- 1 | VDS=600V, VGS=0 |
| Switching Characteristics | |||
| Turn-On Delay Time (Td(on)) | ns | -- 16.5 45 | VDS=300V, ID=8A, RG=25Ω(Note 2) |
| Rise Time (Tr) | ns | -- 60.5 130 | |
| Turn-Off Delay Time (Td(off)) | ns | -- 81 170 | |
| Fall Time (Tf) | ns | -- 64.5 140 | |
| Total Gate Charge (Qg) | nC | -- 28 36 | VDS=480V, VGS=10V, ID=8A(Note 2) |
| Gate-Source Charge (Qgs) | nC | -- 4.5 -- | |
| Gate-Drain Charge (Qgd) | nC | -- 12 -- | |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | pF | -- 965 1255 | VDS=25V, VGS=0, f=1MHz |
| Output Capacitance (Coss) | pF | -- 105 135 | |
| Reverse Transfer Capacitance (Crss) | pF | -- 12 16 | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- -- 8 | |
| Diode Forward On-Voltage (VSD) | V | -- -- 1.4 | IS=8A, VGS=0 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | °C/W | -- -- 3.1 | |
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