switching OSEN OSP18N20 200V N channel MOSFET with high drain current and low gate threshold voltage

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Product Description

Product Overview

The OSP18N20 is a 200V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

Brand: OSEN
Origin: China
Product Order Number: OSP18N20
Revision: Rev 21.2.10
Package: TO-220

Technical Specifications

Symbol	Parameters	Ratings	Unit	Conditions
VDSS	Drain-Source Voltage	200	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	18	A	(Note 2)
IDM	Drain Current-Single Plused	72	A	(Note 1)
PD	Power Dissipation	125	W	(Note 2)
Tj Max.	Operating junction temperature	150
BVDSS	Drain-Source Breakdown Voltage	200	V	ID=250µA, VGS=0V, TJ=25°C (Note 1)
VGS(th)	Gate Threshold Voltage	2.0 - 4.0	V	VDS=VGS, ID=250µA
RDS(on)	Drain-Source On-Resistance	0.15 - 0.20	Ω	VGS=10V, ID=9A
IGSS	Gate-Body Leakage Current	±100	nA	VGS=±20V, VDS=0
IDSS	Zero Gate Voltage Drain Current	1	µA	VDS=200V, VGS=0
gfs	Forward Transconductance	3 - 4	S	VDS=25V, ID=5A
Td(on)	Turn-On Delay Time	11	ns	VDS=100V, ID=18A, RG=2.5Ω,VGS=10V (Note 2)
Tr	Rise Time	33	ns
Td(off)	Turn-Off Delay Time	25	ns
Tf	Fall Time	7	ns
Qg	Total Gate Charge	25	nC	VDS=100V, VGS=10V, ID=18A (Note 2)
Qgs	Gate-Source Charge	7.5	nC
Qgd	Gate-Drain Charge	9.5	nC
Ciss	Input Capacitance	1100	pF	VDS=25V, VGS=0, f=1MHz
Coss	Output Capacitance	180	pF
Crss	Reverse Transfer Capacitance	30	pF
IS	Continuous Drain-Source Diode Forward Current	18	A	(Note 2)
VSD	Diode Forward On-Voltage	1.4	V	IS=9A, VGS=0
Rth(j-c)	Thermal Resistance, Junction to Case	1.0	Ω/W