Low RDS ON NH NPS1N60S Power MOSFET Designed for High Frequency Circuits and Switching Power Supplies
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The NPS1N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, it features low RDS(ON) for reduced power loss, low gate charge for high-speed switching, and high EAS for robust performance. This MOSFET is ideal for applications such as AC/DC converters, adapters, chargers, LED drivers, high-frequency circuits, and switching power supplies.
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF (According to actual changes)
- Date Code: YWW (According to actual changes)
- Internal Code: LLWWF (According to actual changes)
- Model ID: NPS1N60S
- Package: TO-252
- Certifications: RoHS COMPLIANT, Pb-Free
- Weight: Approx. 0.321 Grams (0.01132 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 1 | A | ||
| On Resistance | ID= 1 A,VGS= 10 V | RDS(ON) | 8.00 | 10.50 | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 1 | A | ||
| Continuous Drain Current | Ta= 100 | ID | 0.6 | A | ||
| Drain Current-Pulsed | TJ< 150 | IDM | 4 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 30 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 12 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 0.24 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | 9 | A | ||
| Single Pulse Avalanche Energy | L= 0.5 mH,VDD= 300 V | EAS | 20 | mJ | ||
| Single Pulse Avalanche Energy | IAS= 9 A,RG= 10 Starting Tj=25 ,VG = 10 V | EAS | 20 | mJ | ||
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 62.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 4.17 | /W | ||
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Static off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 600 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.712 | -- | V/ |
| Drain-Source Leakage Current | VDS= 600 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 1 A,VDS= 15 V | gfs | -- | 0.8 | -- | S |
| Static on Characteristics | ||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 1 A,VGS= 10 V | R DS(ON) | -- | 8.00 | 10.50 | |
| Drain-Source On Resistance | ID= 1 A,VGS= 4.5 V | R DS(ON) | -- | 9.20 | 14.07 | |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 3.20 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 130.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 15.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 3.0 | -- | pF |
| Switching Paramters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 300 V | t d(on) | -- | 6.5 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 5.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 25.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 16.0 | -- | ns |
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 300 V | Q g | -- | 4.8 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 0.8 | -- | nC |
| Gate-Drain Charge | ID= 1 A | Q gd | -- | 2.5 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Cuurent | I S | -- | -- | 1 | A | |
| Max. Pulsed Forward Cuurent | I SM | -- | -- | 4 | A | |
| Diode Forward Voltage | ID= 1 A,VGS=0V | V SD | -- | 1.08 | 1.5 | V |
| Reverse Recovery Time | ID= 1 A,di/dt= 100 A/us | t rr | -- | 347 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 300 V | Q rr | -- | 735.0 | -- | uC |
| OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS | ||||||
| Dimension | Milimeters (Min.) | Milimeters (Typ.) | Milimeters (Max.) | Inches (Min.) | Inches (Typ.) | Inches (Max.) |
| A | 6.100 | - | 7.100 | 0.240 | - | 0.280 |
| B | 4.800 | - | 5.800 | 0.189 | - | 0.228 |
| C | 1.950 | - | 2.550 | 0.077 | - | 0.100 |
| D | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
| E | 9.250 | - | 10.750 | 0.364 | - | 0.423 |
| F | 5.600 | - | 6.600 | 0.220 | - | 0.260 |
| G | 2.500 | - | 3.100 | 0.098 | - | 0.122 |
| H | 0.650 | - | 1.050 | 0.026 | - | 0.041 |
| J | 2.100 | - | 2.500 | 0.083 | - | 0.098 |
| L | 1.000 | - | 1.400 | 0.039 | - | 0.055 |
| M | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
| PACKING INFORMATION | ||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 | |
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