Low Gate Charge Power MOSFET NH NSS130N06S N Channel Trench Type for DC DC Converters and Motor Drives
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The NSS130N06S is an N-Channel Enhancement Mode Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, this MOSFET features low RDS(ON) for reduced power loss and low gate charge for high-speed switching. Its high EAS rating ensures robust performance in demanding applications. Typical applications include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF
- Model ID: NSS130N06S
- Package: TO-252
- Certifications: RoHS COMPLIANT
- Weight: App. 0.321 Grams (0.01132 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| VDS @ Tj Min | VDS | 60 | V | |||
| ID @ Ta Min | ID | 45 | A | |||
| RDS(ON) Type @ 10V | RDS(ON) | 10.00 | m | |||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 45 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 29 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 180 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 83 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 33 | W | ||
| Power Dissipation Derating Factor Above 25 | DF | 0.67 | W/ | |||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | 22 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH, VDD= 30 V | EAS | 121 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 62.5 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 1.5 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | BV DSS | 60 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA, Reference 25 | BV DSS/T J | -- | 0.069 | -- | V/ |
| Drain-Source Leakage Current | VDS= 60 V, VGS=0V | IDSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= ±20 V, VDS=0V | IGSS | -- | -- | ±100 | nA |
| Forward Transconductance | ID= 20 A, VDS= 5 V | gfs | -- | 25.0 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | VGS(TH) | 1.0 | 1.5 | 2.0 | V |
| Drain-Source On Resistance | ID= 20 A, VGS= 10 V | RDS(ON) | -- | 10.00 | 13.00 | m |
| Drain-Source On Resistance | ID= 20 A, VGS= 4.5 V | RDS(ON) | -- | 11.50 | 17.42 | m |
| Gate Resistance | VGS=0V, VDS=0V, Freq.=1MHz | Rg | -- | 3.20 | -- | |
| Input Capacitance | VDS= 30 V | Ciss | -- | 1880.0 | -- | pF |
| Output Capacitance | VGS= 0 V | Coss | -- | 135.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | Crss | -- | 100.0 | -- | pF |
| Turn-On Delay Time | VDS= 30 V, VGS= 10 V | td(on) | -- | 13.0 | -- | ns |
| Turn-On Rise Time | VDS= 30 V, VGS= 10 V | tr | -- | 25.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | td(off) | -- | 60.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | tf | -- | 9.5 | -- | ns |
| Total Gate Charge | VDS= 30 V | Qg | -- | 44.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Qgs | -- | 5.5 | -- | nC |
| Gate-Drain Charge | ID= 20 A | Qgd | -- | 12.0 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings | ||||||
| Max. Diode Forward Current | IS | -- | -- | 45 | A | |
| Max. Pulsed Forward Current | ISM | -- | -- | 158 | A | |
| Diode Forward Voltage | ID= 20 A, VGS=0V | VSD | -- | 0.86 | 1.2 | V |
| Reverse Recovery Time | ID= 20 A, di/dt= 100 A/us | trr | -- | 29 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V, VDS= 30 V | Qrr | -- | 21.0 | -- | uC |
Outline Drawings TO-252
OUTLINE DIMENSIONS
| Dim. | Millimeters | Inches | ||||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max. | Min. | Typ. | Max. | |
| A | 6.100 | - | 7.100 | 0.240 | - | 0.280 |
| B | 4.800 | - | 5.800 | 0.189 | - | 0.228 |
| C | 1.950 | - | 2.550 | 0.077 | - | 0.100 |
| D | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
| E | 9.250 | - | 10.750 | 0.364 | - | 0.423 |
| F | 5.600 | - | 6.600 | 0.220 | - | 0.260 |
| G | 2.500 | - | 3.100 | 0.098 | - | 0.122 |
| H | 0.650 | - | 1.050 | 0.026 | - | 0.041 |
| J | 2.100 | - | 2.500 | 0.083 | - | 0.098 |
| L | 1.000 | - | 1.400 | 0.039 | - | 0.055 |
| M | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
PACKING INFORMATION
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) |
|---|---|---|---|---|---|
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 |
Recommended wave soldering condition
| Product Peak Temperature | Soldering Time | |
|---|---|---|
| Pb-free devices | 260 +0/-5 C | 5 +1/-1 seconds |
Recommended temperature profile for IR reflow
| Profile feature | Sn-Pb eutectic Assembly | Pb-free Assembly |
|---|---|---|
| Average ramp-up rate (Tsmax to Tp) | 3C/second max. | 3C/second max. |
| Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) | 100C 150C 60-120 seconds | 150C 200C 60-180 seconds |
| Time maintained above: -Temperature (TL) -Time (tL) | 183C 60-150 seconds | 217C 60-150 seconds |
| Peak Temperature(TP) | 240 +0/-5 C | 260 +0/-5 C |
| Time within 5C of actual peak temperature(tp) | 10-30 seconds | 20-40 seconds |
| Ramp down rate | 6C/second max. | 6C/second max. |
| Time 25 C to peak temperature | 6 minutes max. | 8 minutes max. |
Note: All temperatures refer to topside of the package, measured on the package body surface.
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Sellina