Power MOSFET NH NPB4N65F 650V N Channel Enhancement Mode Ideal for UPS Chargers and PC Power Supplies
Product Overview
The NPB4N65F is a 650V N-Channel Enhancement Mode Power MOSFET from Niu Hang Specification Electronic Co. Ltd. It features low RDS(ON) and ultra-low gate charge, making it suitable for applications such as adapters, PCs, PDs, chargers, and switched-mode power supplies (SMPS), including uninterruptible power supplies (UPS). This RoHS compliant component is 100% UIS and RG tested, ensuring high reliability and performance.
Product Attributes
- Brand: Niu Hang (NH)
- Product Line Code: FF (subject to change)
- Model: NPB4N65F
- Technology: N-Channel Enhancement Mode Power MOSFET
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current | ID | Ta=25 | 4.0 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | 16 | A | ||
| Maximum Power Dissipation | PD | Ta=25 | 100 | W | ||
| Power Dissipation Derating Factor | DF | above 25 | 0.26 | W/ | ||
| Junction Temperature | TJ | 150 | ||||
| Storage temperature range | TSTD | -55 | 150 | |||
| Avalanche Current,Single pulse | IAS | (Note 1) | 4.0 | A | ||
| Single Pulse Avalanche Energy | EAS | L=10mH,IAS=5A | 33 | mJ | ||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=650V,VGS=0V | - | - | 10 | uA |
| Gate-Body Leakage Current | IGSS | VGS=±30V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | RDS(ON) | VGS=10V,ID=2A | - | 2.30 | 2.70 | Ω |
| Input Capacitance | Ciss | VDS=325V,ID=4A, VGS=10V,RG=25Ω, f=1.0MHz | - | 600 | - | pF |
| Output Capacitance | Coss | VDS=325V,ID=4A, VGS=10V,RG=25Ω, f=1.0MHz | - | 50 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=325V,ID=4A, VGS=10V,RG=25Ω, f=1.0MHz | - | 3 | - | pF |
| Turn-On Delay Time | td(on) | VDS=520V,ID=4A, VGS=10V,RG=25Ω | - | 12 | - | ns |
| Turn-On Rise Time | tr | VDS=520V,ID=4A, VGS=10V,RG=25Ω | - | 18 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=520V,ID=4A, VGS=10V,RG=25Ω | - | 30 | - | ns |
| Turn-Off Rise Time | tf | VDS=520V,ID=4A, VGS=10V,RG=25Ω | - | 10 | - | ns |
| Total Gate Charge | Qg | VDS=520V,ID=4A, VGS=10V | - | 14 | - | nC |
| Gate-Source Charge | Qgs | VDS=520V,ID=4A, VGS=10V | - | 5.5 | - | nC |
| Gate-Drain Charge | Qgd | VDS=520V,ID=4A, VGS=10V | - | 3.8 | - | nC |
| Max. Diode Forward Current | IS | - | - | 4 | A | |
| Max. Pulsed Forward Current | ISM | - | - | 16 | A | |
| Diode Forward Voltage | VSD | IS=4A,VGS=0V | - | 0.79 | 1.4 | V |
| Reverse Recovery Time | trr | VR=400V,IF=4A, di/dt=100A/us | - | 250 | 380 | ns |
| Reverse Recovery Charge | Qrr | VR=400V,IF=4A, di/dt=100A/us | - | 2 | - | µC |
| Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||||
| Thermal Resistance Junction to Ambient | RθJA | (Note 2) | - | 62.5 | - | /W |
| Thermal Resistance Junction-Case | RθJC | - | 3.79 | - | /W | |
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design.
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