650V N Channel Enhancement Mode Power MOSFET NH NPS10N65F for power conversion circuits applications

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Product Description

Niu Hang NPS10N65F 650V N-Channel Enhancement Mode Power MOSFET

Product Overview

The Niu Hang NPS10N65F is a 650V N-Channel Enhancement Mode Power MOSFET designed for high-efficiency power applications. It features low RDS(ON), ultra-low gate charge, and is 100% UIS and RG tested. This MOSFET is suitable for use in adapters, PCs, PDs, chargers, LED drivers, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Its robust design and advanced features make it a reliable choice for demanding power conversion circuits.

Product Attributes

Brand: Niu Hang (NH)
Model: NPS10N65F
Technology: N-Channel Enhancement Mode Power MOSFET
Compliance: RoHS Compliant
Testing: 100% UIS and RG Tested
Package: TO-220F

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDS				650	V
Gate-Source Voltage	VGS				±30	V
Continuous Drain Current	ID	Ta= 25			10.0	A
Drain Current-Pulsed	IDM	TJ< 150			32	A
Maximum Power Dissipation	PD	Ta= 25			62.5	W
Power Dissipation Derating Factor above 25	DF	Ta= 25		0.5		W/
Maximum Power Dissipation	PD	Tc= 25			136	W
Power Dissipation Derating Factor above 25	DF	Tc= 25		1.08		W/
Junction Temperature	TJ		-55		150
Storage temperature range	Tstg		-55		150
Avalanche Current,Single pulse	IAS	L= 10 mH			10	A
Single Pulse Avalanche Energy	EAS	starting TJ =25, L=10mH			500	mJ
Thermal Characteristics
Thermal Resistance Junction to Ambient	RJA	Note 2		62.5		/W
Thermal Resistance Junction-Case	RJC	Note 2		0.84		/W
Electrical Characteristics
Drain-Source Breakdown Voltage	BV DSS	VGS=0V, ID=250uA	650			V
Temperature Coefficient	BV DSS /TJ	ID=250uA,Reference25		0.33		V/
Static off Characteristics
Drain-Source Leakage Current	IDSS	VDS= 650 V,VGS=0V		1		uA
Gate-Body Leakage Current	IGSS	VGS= ±30 V,VDS=0V		±100		nA
Gate Threshold Voltage	VGS(TH)	VDS= VDS, ID=250uA	2.0		3.0	V
Static on Characteristics
Drain-Source On Resistance	RDS(ON)	VGS=10V, ID=10A		0.67	0.84
Drain-Source On Resistance	RDS(ON)	VGS=10V, ID=10A		0.84	1.0
Dynamic Characteristics
Input Capacitance	Ciss	VDS= 25 V, VGS=0V, f=1MHz		1609		pF
Output Capacitance	Coss	VGS= 0V, VDS=25V, f=1MHz		136		pF
Reverse Transfer Capacitance	Crss	VGS=0V, VDS=25V, f=1MHz		10.0		pF
Turn-On Delay Time	td(on)	VDS= 325 V, ID=10A, VGS=10V, RG=25		3		ns
Turn-On Rise Time	tr	VDS= 325 V, ID=10A, VGS=10V, RG=25		40		ns
Turn-Off Delay Time	td(off)	VDS= 520 V, ID=10A, VGS=10V, RG=25		90		ns
Turn-Off Rise Time	tf	VDS= 520 V, ID=10A, VGS=10V, RG=25		30		ns
Total Gate Charge	Qg	VDS= 520 V, ID=10A, VGS=10V		385		nC
Gate-Source Charge	Qgs	VDS= 520 V, ID=10A, VGS=10V		3.0	4.0	nC
Gate-Drain Charge	Qgd	VDS= 520 V, ID=10A, VGS=10V		0.67		nC
Drain-Source Diode Characteristics and Maximum Ratings
Max. Diode Forward Current	IS				10.0	A
Max. Pulsed Forward Current	ISM				32	A
Diode Forward Voltage	VSD	IS=10A, VGS=0V		1.4		V
Reverse Recovery Time	trr	IS=10A, di/dt=100 A/us			10.5	ns
Reverse Recovery Charge	Qrr	IS=10A, di/dt=100 A/us		0.39	0.41	µC