Power MOSFET NH NPB9N20ES N Channel Enhancement Mode Featuring Low Gate Charge and High Reliability
Product Overview
The NPB9N20ES is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability in demanding applications. Typical uses include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Certifications: RoHS COMPLIANT
- Package: TO-251
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Model ID | NPB9N20ES | |||||
| Drain-Source Voltage | VDS | 200 | V | Min.@Tj | ||
| Continuous Drain Current | ID | 9 | A | Min.@Ta | ||
| RDS(ON) Type | RDS(ON) | 220.00 | 280.00 | m | ID= 5 A,VGS= 10 V | |
| Drain-Source Breakdown Voltage | BV DSS | 200 | V | VGS=0V,ID=250uA | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS= 200 V,VGS=0V | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS= 30 V,VDS=0V | ||
| Gate Threshold Voltage | VGS(TH) | 1.0 | 2.0 | 3.0 | V | ID=250uA |
| Input Capacitance | Ciss | 675.0 | pF | VDS= 100 V | ||
| Output Capacitance | Coss | 85.0 | pF | VGS= 0 V | ||
| Reverse Transfer Capacitance | Crss | 5.0 | pF | F= 1 MHZ | ||
| Turn-On Delay Time | td(on) | 9.0 | ns | VDS= 100 V | ||
| Turn-On Rise Time | tr | 3.5 | ns | VGS= 10 V | ||
| Turn-Off Delay Time | td(off) | 27.5 | ns | RL= 1.2 | ||
| Turn-Off Rise Time | tf | 4.0 | ns | RG= 10 | ||
| Total Gate Charge | Qg | 15.1 | nC | VDS= 100 V | ||
| Continuous Drain Current (Note 1) | ID | 9 | A | Ta= 25 | ||
| Continuous Drain Current (Note 1) | ID | 6 | A | Ta= 100 | ||
| Drain Current-Pulsed (Note 1) | IDM | 36 | A | TJ | ||
| Maximum Power Dissipation | PD | 75 | W | Ta= 25 | ||
| Power Dissipation Derating Factor | DF | 0.60 | W/ | Above 25 | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current,Single Pulse (Note 1) | IAS | 25 | A | L= 0.5 mH | ||
| Single Pulse Avalanche Energy (Note 1) | EAS | 150 | mJ | L= 0.5 mH,VDD= 100 V | ||
| Thermal Resistance Junction To Ambient | RJA | 100.0 | /W | Still Air Environment With Ta =25C | ||
| Thermal Resistance Junction-Case | RJC | 1.7 | /W | Device Mounted On 1 in 2 FR-4 Board With 2oz | ||
| Weight | 0.361 | Gram | (0.01273 Ounce) | |||
Note: 1. Pulse Width Limited By Max. Junction Temperature. (See Fig. 13).
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