NJS65R300F NH N Channel MOSFET Designed for LED Drives Adaptors and General Switching Power Supplies
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Product Description
Product Overview
The NJS65R300F is an N-Channel Enhancement Super Junction MOSFET manufactured by Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching, making it suitable for high-frequency circuits and switching power supplies. Key applications include AC/DC converters, adaptors, chargers, LED drives, and general switching power supplies. The MOSFET offers high EAS for enhanced reliability and is 100% UIS and RG tested.
Product Attributes
- Brand: Niuhang (NH Trademark)
- Product Line Code: FF
- Model ID: NJS65R300F
- Package: TO-220F
- Certifications: RoHS COMPLIANT, Pb-Frce
- Origin: Guangdong, China
Technical Specifications
| Specification | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 655 | V |
| Continuous Drain Current (ID) at Ta=25 | 15 | A |
| Continuous Drain Current (ID) at Ta=100 | 10 | A |
| Drain Current-Pulsed (IDM) | 60 | A |
| Maximum Power Dissipation (PD) at Ta=25 | 32 | W |
| Power Dissipation Derating Factor (DF) Above 25 | 0.26 | W/ |
| Junction Temperature (TJ) | -55 to 150 | |
| Storage Temperature Range (TSTD) | -55 to 150 | |
| Avalanche Current, Single Pulse (IAS) | 44.7 | A |
| Single Pulse Avalanche Energy (EAS) | 500 | mJ |
| Typical RDS(ON) at 10V | 278.00 | m |
| Typical RDS(ON) at 4.5V | 319.70 | m |
| Drain-Source Breakdown Voltage (BV DSS) | 655 | V |
| Bvdss Temperature Coefficient | 0.778 | V/ |
| Drain-Source Leakage Current (IDSS) | 1.0 | uA |
| Gate-Body Leakage Current (IGSS) | 100 | nA |
| Forward Transconductance (gfs) | 16 | S |
| Gate Threshold Voltage (VGS(TH)) | 2.8 - 4.2 | V |
| Input Capacitance (Ciss) | 1020.0 | pF |
| Output Capacitance (Coss) | 110.0 | pF |
| Reverse Transfer Capacitance (Crss) | 5.0 | pF |
| Turn-On Delay Time (td(on)) | 8.5 | ns |
| Turn-On Rise Time (tr) | 21.0 | ns |
| Turn-Off Delay Time (td(off)) | 33.0 | ns |
| Turn-Off Rise Time (tf) | 21.0 | ns |
| Total Gate Charge (Qg) | 23.0 | nC |
| Gate-Source Charge (Qgs) | 6.0 | nC |
| Gate-Drain Charge (Qgd) | 14.0 | nC |
| Max. Diode Forward Current (IS) | 15 | A |
| Max. Pulsed Forward Current (ISM) | 53 | A |
| Diode Forward Voltage (VSD) | 0.75 - 1.1 | V |
| Reverse Recovery Time (trr) | 215 | ns |
| Reverse Recovery Charge (Qrr) | 1.5 | uC |
| Weight | 2.048 | Grams |
| Thermal Resistance Junction To Ambient (RJA) | 80.0 | /W |
| Thermal Resistance Junction-Case (RJC) | 3.9 | /W |
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