N Channel Enhanced Shielded Gate Trench MOSFET NH NSS085N100C with Low Reverse Transfer Capacitance

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Product Description

Product Overview

The Niuhang NSS085N100C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET designed for high-frequency circuits, motor drives, and automotive electronics. It features Niuhang's Advanced SGT Technology, offering low reverse transfer capacitances and low gate charge for reduced switching losses. This MOSFET is suitable for synchronous rectification applications and is 100% UIS and DVSD tested.

Product Attributes

Brand: Niuhang Electronic Specification Technology Co., Ltd
Model: NSS085N100C
Channel Type: N-Channel
Technology: Enhanced Shielded Gate Trench (SGT)
Package: TO-220C
Certifications: RoHS Compliant, Pb-Free

Technical Specifications

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	@Tj	VDS			100	V
Continuous Drain Current	@Ta	ID			70.0	A
Drain-Source On Resistance	@10V	RDS(ON)		8.5	m
Absolute Maximum Ratings
Drain-Source Voltage	(Ta=25 Unless Otherwise Specified)	VDS			100	V
Gate-Source Voltage		VGS			20	V
Continuous Drain Current	Ta= 25	ID			70.0	A
Continuous Drain Current	Ta= 100	ID			44.8	A
Drain Current-Pulse	TJ< 150	IDM			233	A
Maximum Power Dissipation	Ta= 25	PD			89	W
Maximum Power Dissipation	Ta= 100	PD			36	W
Avalanche Current,Single Pulse	L= 0.5 mH	IAS			16.0	A
Single Pulse Avalanche Energy	L= 0.5 mH	EAS			64	mJ
Thermal Characteristics
Junction Temperature	(Ta=25 Unless Otherwise Specified)	TJ	-55		150
Storage Temperature Range		TSTD	-55		150
Thermal Resistance Junction To Ambient	Still Air Environment	RJA		60.0		/W
Thermal Resistance Junction-Case	Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat.	RJC		1.40		/W
Electrical Characteristics
Drain-Source Breakdown Voltage	VGS=0V,ID=250uA	BVDSS	100			V
Bvdss Temperature Coefficient	ID=250uA,Reference25	BVDSS/TJ		0.11		V/
Drain-Source Leakage Current	VDS= 100 V,VGS=0V	IDSS			1	uA
Gate-Body Leakage Current	VGS= 20 V,VDS=0V	IGSS			100	nA
Forward Transconductance	ID= 20.0 A,VDS= 5 V	gfs		23.0		S
Gate Threshold Voltage	VGS= VDS ID=250uA	VGS(TH)	1.0	2.1	3.0	V
Drain-Source On Resistance	ID= 20.0 A,VGS= 10.0 V	RDS(ON)		8.5	10.2	m
Drain-Source On Resistance	ID= 20.0 A,VGS= 4.5 V	RDS(ON)		9.8	13.7	m
Input Capacitance	VDS= 50 V	Ciss		1900.0		pF
Output Capacitance	VGS= 0 V	Coss		500.0		pF
Reverse Transfer Capacitance	F= 1 MHZ	Crss		35.0		pF
Turn-On Delay Time	VDS= 50 V, VGS= 10.0 V, RG= 10.0	td(on)		9.0		ns
Turn-On Rise Time	VDS= 50 V, VGS= 10.0 V, RG= 10.0	tr		17.0		ns
Turn-Off Delay Time	VDS= 50 V, VGS= 10.0 V, RG= 10.0	td(off)		32.0		ns
Turn-Off Rise Time	VDS= 50 V, VGS= 10.0 V, RG= 10.0	tf		74.0		ns
Total Gate Charge	VDS= 50 V	Qg		40.0		nC
Gate-Source Charge	VGS= 10.0 V	Qgs		9.0		nC
Gate-Drain Charge	ID= 20.0 A, VGS= 10.0 V	Qgd		10.0		nC
Max. Diode Forward Current		IS			70	A
Max. Pulsed Forward Current		ISM			280	A
Diode Forward Voltage	ID= 20.0 A,VGS=0V	VSD		0.80	1.2	V
Reverse Recovery Time	ID= 20.0 A,di/dt= 100 A/us	trr		37.0		ns
Reverse Recovery Charge	VGS= 10.0 V,VDD= 50 V	Qrr		34.0		nC
Outline Dimensions (TO-220C)
Dim.	Unit	Min.	Typ.	Max.	Min.	Typ.	Max.
A	mm	9.25	-	10.75	0.3642	-	0.4232
B	mm	1.10	-	1.65	0.0433	-	0.0650
C	mm	4.15	-	4.95	0.1634	-	0.1949
D	mm	0.25	-	0.65	0.0098	-	0.0256
E	mm	14.50	-	16.70	0.5709	-	0.6575
F	mm	8.40	-	9.95	0.3307	-	0.3917
L	mm	12.15	-	14.30	0.4783	-	0.5630
H	mm	3.00	-	3.80	0.1181	-	0.1496
J	mm	1.05	-	1.60	0.0413	-	0.0630
K	mm	0.65	-	0.95	0.0256	-	0.0374
M	mm	2.10	-	2.90	0.0827	-	0.1142
O	mm	3.20	-	4.10	0.1260	-	0.1614
P	mm	2.45	-	3.10	0.0965	-	0.1220
Packing Information
Package Type	Package Code	Approx. Weight (g/Pcs)	Package Method	Quantity (Pcs/Min. Pack.)	Quantity (Pcs/Inner Box)	Quantity (Pcs/Carton)
TO-220C	P1	2.057	Tube	50	1000	5000