Power switching transistor NIKO-SEM P2610BD N channel enhancement mode field effect transistor

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Product Description

Product Overview

The P2610BD is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It offers a robust combination of voltage, current, and low on-resistance capabilities, making it suitable for power switching and control circuits. This transistor is Halogen-Free & Lead-Free, adhering to environmental standards.

Product Attributes

Brand: NIKO-SEM
Model: P2610BD
Package: TO-252
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameters	Symbol	Conditions	Limits	Units
ABSOLUTE MAXIMUM RATINGS	VDS		100	V
	VGS		±20	V
	ID	TC = 25 °C	36	A
	ID	TC = 100 °C	23	A
	IDM		80	A
	IAS		13.9	A
	EAS	L = 0.1mH	9.7	mJ
	PD	TC = 25 °C	78	W
	PD	TC = 100 °C	31	W
	TJ, Tstg		-55 to 150	°C
	ELECTRICAL CHARACTERISTICS	V(BR)DSS	VGS = 0V, ID = 250µA	100	V
VGS(th)		VDS = VGS, ID = 250µA	1.3 - 1.8 - 2.3	V
IGSS		VDS = 0V, VGS = ±20V	±100	nA
IDSS		VDS = 80V, VGS = 0V	1	µA
IDSS		VDS = 80V, VGS = 0V, TJ = 125 °C	10	µA
RDS(ON)		VGS = 4.5V, ID = 10A	24 - 35	mΩ
RDS(ON)		VGS = 10V , ID = 10A	22 - 26.8	mΩ
DYNAMIC CHARACTERISTICS	gfs	VDS = 5V, ID = 10A	55	S
	Ciss	VGS = 0V, VDS = 25V, f = 1MHz	1918	pF
	Coss		139	pF
	Crss		88	pF
	Rg	VGS = 0V, VDS = 0V, f = 1MHz	0.8	Ω
	Qg	VGS = 10 V, VDS = 50V , ID = 10A	41.5	nC
	Qgs		5.7
	Qgd		11.6
	td(on)	VDS = 50V ID ≈ 10A, VGS = 10V, RGEN =6Ω	14	nS
	tr		42	nS
	td(off)		43	nS
tf		34	nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS	IS		36	A
	VSD	IF = 10A, VGS = 0V	1.2	V
	trr	IF = 10A, dlF/dt = 100A / μS	29.3	nS
	Qrr		29	nC