N Channel Enhancement Mode Field Effect Transistor NIKO-SEM PM606BA Featuring SOT23 Package Halogen Free

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Product Description

N-Channel Enhancement Mode Field Effect Transistor PM606BA

The PM606BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It features a SOT-23(S) package and is Halogen-Free & Lead-Free.

Product Attributes

Brand: NIKO-SEM
Package: SOT-23(S)
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Limit	Units
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS	TA = 25 C Unless Otherwise Noted	30	V
Gate-Source Voltage	VGS	TA = 25 C Unless Otherwise Noted	±20	V
Continuous Drain Current	ID	TA = 25 C	5	A
Continuous Drain Current	ID	TA = 70 C	3.7	A
Pulsed Drain Current	IDM	1Pulse width limited by maximum junction temperature.	15	A
Power Dissipation	PD	TA = 25 C	0.8	W
Power Dissipation	PD	TA = 70 C	0.5	W
Operating Junction & Storage Temperature Range	Tj, Tstg		-55 to 150	C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient	RθJA	2The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.	146	°C / W
Junction-to-Case	RθJC		60	°C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250µA	30	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250µA	1.3 TYP 1.75 MAX 2.3	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = ±20V	±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 24V, VGS = 0V	1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = 20V, VGS = 0V, TJ = 55 °C	10	µA
Drain-Source On-State Resistance	RDS(ON)	VGS =4.5V, ID = 5A	23 TYP 31 MAX	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS = 10V, ID = 5A	17 TYP 20 MAX	mΩ
Forward Transconductance	gfs	VDS = 5V, ID = 5A	26	S
Input Capacitance	Ciss	VGS = 0V, VDS = 15V, f = 1MHz	329	pF
Output Capacitance	Coss	VGS = 0V, VDS = 15V, f = 1MHz	70	pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = 15V, f = 1MHz	45	pF
Total Gate Charge	Qg	VDS = 15V , VGS = 10V, ID = 5A	7.8	nC
Gate-Source Charge	Qgs	VDS = 15V , VGS = 10V, ID = 5A	1.2	nC
Gate-Drain Charge	Qgd	VDS = 15V , VGS = 10V, ID = 5A	2.3	nC
Turn-On Delay Time	td(on)	VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω	17	nS
Rise Time	tr	VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω	17	nS
Turn-Off Delay Time	td(off)	VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω	37	nS
Fall Time	tf	VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω	18	nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS	TJ = 25 °C	0.7	A
Forward Voltage	VSD	IF = 5A, VGS = 0V	1.1	V
Reverse Recovery Time	trr	IF = 5A, dlF/dt = 100A / µS	10	nS
Reverse Recovery Charge	Qrr	IF = 5A, dlF/dt = 100A / µS	2.6	nC