NIKO SEM PJ614DA Dual N Channel Enhancement Mode Field Effect Transistor Suitable for Power Switching

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Product Description

Product Overview

The F-43-3 PJ614DA is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features J-Lead packaging, is Halogen-Free & Lead-Free, and offers robust performance with a 20V Drain-Source Voltage and up to 10.5A Continuous Drain Current. This transistor is suitable for power management and switching applications where efficiency and reliability are critical.

Product Attributes

Brand: NIKO-SEM
Model: PJ614DA
Type: Dual N-Channel Enhancement Mode Field Effect Transistor
Package: J-Lead
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS				20	V
Gate-Source Voltage	VGS			10		V
Continuous Drain Current	ID	TA = 25 C			10.5	A
Continuous Drain Current	ID	TA = 70 C			8.4	A
Pulsed Drain Current	IDM				28	A
Avalanche Current	IAS				22	A
Avalanche Energy	EAS	L = 0.1mH			24	mJ
Power Dissipation	PD	TA = 25 C			2.1	W
Power Dissipation	PD	TA = 70 C			1.3	W
Operating Junction & Storage Temperature Range	Tj, Tstg		-55		150	C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (t 10s)	RJA			58		C / W
Junction-to-Ambient (Steady-State)	RJA			73		C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250A	20			V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	0.35	0.7	1	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = 8V			30	uA
Zero Gate Voltage Drain Current	IDSS	VDS = 16V, VGS = 0V		1		uA
Zero Gate Voltage Drain Current	IDSS	VDS = 10V, VGS = 0V, TJ = 70 C		10		uA
Drain-Source On-State Resistance	RDS(ON)	VGS = 2.5V, ID = 3A		8.5	13	m
Drain-Source On-State Resistance	RDS(ON)	VGS = 3.1V, ID = 3A		7.8	11.5	m
Drain-Source On-State Resistance	RDS(ON)	VGS = 3.8V, ID = 3A		7.2	10.6	m
Drain-Source On-State Resistance	RDS(ON)	VGS = 4.5V, ID = 3A		7.1	10	m
Forward Transconductance	gfs	VDS = 5V, ID = 3A		40		S
Input Capacitance	Ciss	VGS = 0V, VDS = 10V, f = 1MHz		1133		pF
Output Capacitance	Coss	VGS = 0V, VDS = 10V, f = 1MHz		214		pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = 10V, f = 1MHz		168		pF
Gate Resistance	Rg	VGS = 0V, VDS = 0V, f = 1MHz		1.5
Total Gate Charge	Qg	VDS = 10V , VGS = 4.5V, ID = 3A		17.4		nC
Gate-Source Charge	Qgs	VDS = 10V , VGS = 4.5V, ID = 3A		1.1		nC
Gate-Drain Charge	Qgd	VDS = 10V , VGS = 4.5V, ID = 3A		5.1		nC
Turn-On Delay Time	td(on)	VDS = 10V , ID 3A, VGS = 4.5V, RG = 6		24		nS
Rise Time	tr	VDS = 10V , ID 3A, VGS = 4.5V, RG = 6		32		nS
Turn-Off Delay Time	td(off)	VDS = 10V , ID 3A, VGS = 4.5V, RG = 6		66		nS
Fall Time	tf	VDS = 10V , ID 3A, VGS = 4.5V, RG = 6		35		nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS				1.7	A
Forward Voltage	VSD	IF = 3A, VGS = 0V		1.2		V
Reverse Recovery Time	trr	IF = 3A, dlF/dt = 100A / S		14		nS
Reverse Recovery Charge	Qrr	IF = 3A, dlF/dt = 100A / S		5.4		nC