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power management component NIKO-SEM P5102FM P Channel Enhancement Mode MOSFET for switching circuits

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Product Description

Product Overview

The P5102FM is a P-Channel Enhancement Mode MOSFET designed for various applications. It offers key electrical characteristics and absolute maximum ratings suitable for power management and switching circuits.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterTest ConditionsSymbolMinTypMaxUnit
STATIC LIMITSDrain-Source Breakdown VoltageV(BR)DSS-20V
Gate Threshold VoltageVGS(th)-0.45-0.6-0.9V
Zero Gate Voltage Drain CurrentIDSS-1-10nA
Gate-Source LeakageIGSS100nA
Drain-Source On-State ResistanceRDS(ON)-4.5V, ID = -3.5A4045m
VGS = -4.5V, ID = -3.5A4555m
Continuous Drain CurrentIDTA = 25 C-20V
ELECTRICAL CHARACTERISTICSInput CapacitanceCissVGS = 0V, VDS = -10V, f = 1MHz1180pF
Output CapacitanceCossVGS = 0V, VDS = -10V, f = 1MHz185pF
Reverse Transfer CapacitanceCrssVGS = 0V, VDS = -10V, f = 1MHz117pF
Forward TransconductancegfsVDS = -10V, ID = -3.5A4855S
On-State Drain CurrentID(ON)VDS = -5V, VGS = -4.5V-3.5A
DYNAMICTurn-On Delay Timetd(on)ID @ -3.5A, VGS = -4.5V, RGEN = 3.314nS
Rise TimetrID @ -3.5A, VGS = -4.5V, RGEN = 3.320nS
Fall TimetfID @ -3.5A, VGS = -4.5V, RGEN = 3.336nS
SOURCE-DRAIN DIODEContinuous CurrentIS-3.5A
Forward VoltageVSDIF = -3.5A, VGS = 0V-1.3V
Reverse Recovery TimetrrIF = -3.5A, dlF/dt = 100A / mS4.6nS
ABSOLUTE MAXIMUM RATINGSDrain-Source VoltageVDS-21V
Continuous Drain CurrentIDTA = 25 C-3.5A
Pulsed Drain CurrentIDM-20A
Gate-Source VoltageVGS8V
Power DissipationPDTA = 25 C0.6W
TA = 70 C1.0W
THERMAL RESISTANCEJunction-to-AmbientRqJA120C / W
MAXIMUM THERMAL RESISTANCEJunction & Storage Temperature RangeTJ, TSTG-55 to 150C

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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