N Channel Power MOSFET PAKER SI2300 with Low On Resistance and RoHS Compliant Small Outline Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The SI2300 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and is housed in a small outline SOT-23 plastic package. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications requiring efficient power management.
Product Attributes
- Brand: (Pakermicro)
- Origin: Shenzhen, China
- Package: SOT-23 Small Outline Plastic Package
- Certifications: UL:94-0, Halogen free, RoHS compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | -- | -- | 20 | V |
| VGS | Gate-Source Voltage | -- | -- | -- | 12 | V |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 150 | C |
| IDM | Pulse Drain Current | Tc=25C | -- | -- | 18 | A |
| ID | Continuous Drain Current | Tc=25C | -- | -- | 4.5 | A |
| PD | Maximum Power Dissipation | Tc=25C | -- | -- | 1 | W |
| RJA | Thermal Resistance Junction-Ambient | (*1 in2 Pad of 2-oz Copper), Max. | -- | 125 | -- | C/W |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -- | 4.5 | A |
| Electrical Characteristics | ||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=20VVGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=12VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 0.45 | 0.62 | 1 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=4.5A | -- | 0.45 | 0.62 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=2.5VID=3.0A | -- | 1.2 | -- | m |
| CISS | Input Capacitance | VDS=10VVGS=0V f=1MHz | -- | 620 | -- | pF |
| COSS | Output Capacitance | VDS=10VVGS=0V f=1MHz | -- | 114 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=10VVGS=0V f=1MHz | -- | 64 | -- | pF |
| Qg | Total Gate Charge | VDS=10VID=4.5A VGS=4.5V | -- | 13 | -- | nC |
| Qgs | Gate Source Charge | VDS=10VID=4.5A VGS=4.5V | -- | 1.9 | -- | nC |
| Qgd | Gate Drain Charge | VDS=10VID=4.5A VGS=4.5V | -- | 1.4 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=10VRL=1.5 VGS=4.5VRG=10 | -- | 7.1 | -- | nS |
| tr | Turn-on Rise Time | -- | 11 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 18 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 13 | -- | nS | |
| VSD | Forward on voltage | Tj=25Is=4.5A | -- | -- | 1.2 | V |
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