252 Package Halogen Free Lead Free P Channel Enhancement Mode Field Effect Transistor NIKO SEM PD537BA

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The PD537BA is a P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers Halogen-Free & Lead-Free compliance and is housed in a TO-252 package.

Product Attributes

Brand: NIKO-SEM
Package: TO-252
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Limits	Units
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS		-30	V
Gate-Source Voltage	VGS		±25	V
Continuous Drain Current	ID	TC = 25 °C	-71	A
Continuous Drain Current	ID	TC = 100 °C	-45	A
Pulsed Drain Current	IDM		-160	A
Avalanche Current	IAS		-36	A
Avalanche Energy	EAS	L = 0.1mH	64.8	mJ
Power Dissipation	PD	TC = 25 °C	73	W
Power Dissipation	PD	TC = 100 °C	29	W
Junction & Storage Temperature Range	TJ, Tstg		-55 to 150	°C
THERMAL RESISTANCE RATINGS
Junction-to-Case	RθJC		1.7	°C / W
Junction-to-Ambient	RθJA		62.5	°C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = -250µA	-30	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = -250µA	-1 to -1.6	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = ±25V	±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = -24V, VGS = 0V	-1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = -20V, VGS = 0V, TJ = 125 °C	-10	µA
Drain-Source On-State Resistance	RDS(ON)	VGS = -10V, ID = -20A	6.5 to 8	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS = -4.5V, ID = -20A	9.6 to 14	mΩ
Forward Transconductance	gfs	VDS = -5V, ID = -20A	49	S
Input Capacitance	Ciss	VGS = 0V, VDS = -15V, f = 1MHz	2464	pF
Output Capacitance	Coss	VGS = 0V, VDS = -15V, f = 1MHz	374	pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = -15V, f = 1MHz	271	pF
Gate Resistance	Rg	VGS =0V, VDS = 0V, f = 1MHz	3.8	Ω
Total Gate Charge	Qg	VDS = -15V , ID = -20A, VGS=-10V	55	nC
Total Gate Charge	Qg	VDS = -15V , ID = -20A, VGS=-4.5V	27	nC
Gate-Source Charge	Qgs	VDS = -15V , ID = -20A, VGS=-10V	8.3	nC
Gate-Drain Charge	Qg	VDS = -15V , ID = -20A, VGS=-10V	11	nC
Turn-On Delay Time	td(on)	VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω	15	nS
Rise Time	tr	VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω	20	nS
Turn-Off Delay Time	td(off)	VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω	41	nS
Fall Time	tf	VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω	23	nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS		-56	A
Forward Voltage	VSD	IF = -20A, VGS = 0V	-1.3	V
Reverse Recovery Time	trr	IF = -20A, dlF/dt = 100A / μS	26	nS
Reverse Recovery Charge	Qrr	IF = -20A, dlF/dt = 100A / μS	13	nC