NIKO SEM PK664BA N Channel Enhancement Mode Field Effect Transistor for Power Applications PDFN 5x6P
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Product Description
Product Overview
The NIKO-SEM PK664BA is an N-Channel Enhancement Mode Field Effect Transistor designed for power applications. It features a PDFN 5x6P package, offering Halogen-Free & Lead-Free compliance.
Product Attributes
- Brand: NIKO-SEM
- Model: PK664BA
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25 °C | 114 | A | ||
| Continuous Drain Current | ID | TC = 100 °C | 72 | A | ||
| Pulsed Drain Current | IDM | 250 | A | |||
| Continuous Drain Current (Steady-State) | ID | TA = 25 °C | 23 | A | ||
| Continuous Drain Current (Steady-State) | ID | TA = 70 °C | 18 | A | ||
| Continuous Drain Current (t ≤10s) | ID | TA = 25 °C | 32 | A | ||
| Continuous Drain Current (t ≤10s) | ID | TA = 70 °C | 26 | A | ||
| Avalanche Current | IAS | 48 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 115 | mJ | ||
| Power Dissipation | PD | TC = 25 °C | 59 | W | ||
| Power Dissipation | PD | TC = 100 °C | 23 | W | ||
| Power Dissipation (Steady-State) | PD | TA = 25 °C | 2.4 | W | ||
| Power Dissipation (Steady-State) | PD | TA = 70 °C | 1.5 | W | ||
| Power Dissipation (t ≤10s) | PD | TA = 25 °C | 4.8 | W | ||
| Power Dissipation (t ≤10s) | PD | TA = 70 °C | 3 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RθJA | t ≤10s | 26 | °C / W | ||
| Junction-to-Ambient | RθJA | Steady-State | 51 | °C / W | ||
| Junction-to-Case | RθJC | Steady-State | 2.1 | °C / W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 | 1.75 | 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID =20A | 2.2 | 3 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 20A | 1.7 | 2.4 | mΩ | |
| Forward Transconductance | gfs | VDS = 5V, ID = 20A | 62 | S | ||
| DYNAMIC | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 2809 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 490 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 324 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1 | Ω | ||
| Total Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 20A | 57.3 | nC | ||
| Gate-Source Charge | Qgs | VGS = 10V | 29.3 | nC | ||
| Gate-Drain Charge | Qgd | VGS = 4.5V | 9 | nC | ||
| Turn-On Delay Time | td(on) | VDS = 15V , ID ≈ 20A, VGS = 10V, RGEN =6Ω | 26 | nS | ||
| Rise Time | tr | VDS = 15V , ID ≈ 20A, VGS = 10V, RGEN =6Ω | 15 | nS | ||
| Turn-Off Delay Time | td(off) | VDS = 15V , ID ≈ 20A, VGS = 10V, RGEN =6Ω | 56 | nS | ||
| Fall Time | tf | VDS = 15V , ID ≈ 20A, VGS = 10V, RGEN =6Ω | 23 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 59 | A | |||
| Forward Voltage | VSD | IF = 20A, VGS = 0V | 1 | V | ||
| Reverse Recovery Time | trr | IF = 20A, dlF/dt = 100A / μS | 40 | nS | ||
| Reverse Recovery Charge | Qrr | IF = 20A, dlF/dt = 100A / μS | 40 | nC | ||
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