N Channel Enhancement Mode Transistor with Environmentally Friendly Lead Free Design NIKO-SEM PE616BA
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Product Description
Product Overview
The PE616BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with features like low on-resistance and fast switching characteristics. This transistor is Halogen-Free & Lead-Free, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: NIKO-SEM
- Product Code: PE616BA
- Package Type: PDFN 3x3P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25 °C | 36 | A | ||
| TC = 100 °C | 23 | A | ||||
| Pulsed Drain Current | IDM | 1 | 100 | A | ||
| Continuous Drain Current | ID | TA = 25 °C | 12 | A | ||
| TA = 70 °C | 9.2 | A | ||||
| Avalanche Current | IAS | 23 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 26.4 | mJ | ||
| Power Dissipation | PD | TC = 25 °C | 16.7 | W | ||
| TC = 100 °C | 6.7 | W | ||||
| Power Dissipation | PD | TA = 25 °C | 1.7 | W | ||
| TA = 70 °C | 1.1 | W | ||||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RθJA | 2 | 75 | °C / W | ||
| Junction-to-Case | RθJC | 7 | °C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.35 | 1.8 | 3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 12A | 7 | 9.5 | mΩ | |
| VGS = 10V, ID = 12A | 5.4 | 7 | mΩ | |||
| Forward Transconductance | gfs | VDS = 5V, ID = 12A | 55 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 835 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 158 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 96 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 2.4 | Ω | ||
| Total Gate Charge | Qg | VGS = 10V, VDS = 15V, ID = 12A | 17.7 | nC | ||
| VGS = 4.5V, VDS = 15V, ID = 12A | 9.5 | nC | ||||
| Gate-Source Charge | Qgs | VGS = 10V, VDS = 15V, ID = 12A | 2.3 | nC | ||
| Gate-Drain Charge | Qgd | VGS = 10V, VDS = 15V, ID = 12A | 5.1 | nC | ||
| Turn-On Delay Time | td(on) | VDS = 15V, ID ≈ 12A, VGS = 10V, RGEN = 6Ω | 27 | nS | ||
| Rise Time | tr | VDS = 15V, ID ≈ 12A, VGS = 10V, RGEN = 6Ω | 23 | nS | ||
| Turn-Off Delay Time | td(off) | VDS = 15V, ID ≈ 12A, VGS = 10V, RGEN = 6Ω | 51 | nS | ||
| Fall Time | tf | VDS = 15V, ID ≈ 12A, VGS = 10V, RGEN = 6Ω | 24 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 14 | A | |||
| Forward Voltage | VSD | IF = 12A, VGS = 0V | 1.2 | V | ||
| Reverse Recovery Time | trr | IF = 12A, dlF/dt = 100A / µS | 13.3 | nS | ||
| Reverse Recovery Charge | Qrr | IF = 12A, dlF/dt = 100A / µS | 5.2 | nC | ||
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