Dual N Channel Enhancement Mode Field Effect Transistor NIKO SEM PB544JU Featuring TDFN 2x3 6 Package
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Product Description
Product Overview
The F-52-5 PB544JU is a Dual N-Channel Enhancement Mode Field Effect Transistor in a TDFN 2x3-6 package. It is designed for various electronic applications and is Halogen-Free & Lead-Free.
Product Attributes
- Brand: NIKO-SEM
- Package: TDFN 2x3-6
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±10 | V | |
| Continuous Drain Current | ID | TA = 25 °C | 12.9 | A |
| Continuous Drain Current | ID | TA = 70 °C | 10 | A |
| Pulsed Drain Current | IDM | 42 | A | |
| Avalanche Current | IAS | 23 | A | |
| Avalanche Energy | EAS | 26 | mJ | |
| Power Dissipation | PD | TA = 25 °C | 2.4 | W |
| Power Dissipation | PD | TA = 70 °C | 1.5 | W |
| Junction & Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | Typical (1in2 FR-4 board, 2oz. Copper, still air) | 52 | °C / W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 20 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 0.4 - 0.66 - 1 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±8V | ±10 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 16V, VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS=10V, VGS=0V, TJ=125 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 3A | 5.1 - 6.3 - 8 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 3.8V, ID = 3A | 5.4 - 7.2 - 8.1 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 3.1V, ID = 3A | 5.7 - 7.6 - 9.5 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 2.5V, ID = 3A | 6.3 - 8.4 - 10.5 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 1.8V, ID = 3A | 7 - 11 - 15 | mΩ |
| Forward Transconductance | gfs | VDS = 5V, ID = 3A | 32 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 10V, f = 1MHz | 1584 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 10V, f = 1MHz | 215 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 10V, f = 1MHz | 164 | pF |
| Total Gate Charge | Qg | VDS = 10V, ID = 3A, VGS = 4.5V | 18.4 | nC |
| Gate-Source Charge | Qgs | VDS = 10V, ID = 3A, VGS = 4.5V | 1.8 | nC |
| Gate-Drain Charge | Qgd | VDS = 10V, ID = 3A, VGS = 4.5V | 4.4 | nC |
| Turn-On Delay Time | td(on) | VDD = 10V, ID ≈ 3A, VGS = 4.5V, RGS = 6Ω | 38 | nS |
| Rise Time | tr | VDD = 10V, ID ≈ 3A, VGS = 4.5V, RGS = 6Ω | 42 | nS |
| Turn-Off Delay Time | td(off) | VDD = 10V, ID ≈ 3A, VGS = 4.5V, RGS = 6Ω | 60 | nS |
| Fall Time | tf | VDD = 10V, ID ≈ 3A, VGS = 4.5V, RGS = 6Ω | 25 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 2 | A | |
| Forward Voltage | VSD | IF = 3A, VGS = 0V | 1.2 | V |
| Reverse Recovery Time | trr | IF = 3A, dlF/dt = 100A / μS | 20 | nS |
| Reverse Recovery Charge | Qrr | IF = 3A, dlF/dt = 100A / μS | 9 | nC |
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