N Channel Logic Level Enhancement Mode Field Effect Transistor NIKO SEM P5506BDG with TO 252 Package

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Product Description

Product Overview

N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for general purpose applications. This transistor is Halogen-Free & Lead-Free, ensuring compliance with environmental standards.

Product Attributes

Brand: NIKO-SEM
Model: P5506BDG
Package: TO-252
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Limit	Units
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS		60	V
Gate-Source Voltage	VGS		±20	V
Continuous Drain Current	ID	TC = 25 °C	22	A
Continuous Drain Current	ID	TC = 70 °C	18	A
Pulsed Drain Current	IDM		80	A
Power Dissipation	PD	TC = 25 °C	50	W
Power Dissipation	PD	TC = 70 °C	32	W
Operating Junction & Storage Temperature Range	Tj, Tstg		-55 to 150	°C
Lead Temperature	TL	1/16” from case for 10 sec.	275	°C
THERMAL RESISTANCE RATINGS
Junction-to-Case	RθJc	TYPICAL	2.5	°C / W
Junction-to-Ambient	RθJA	TYPICAL	55	°C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250µA	60	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250µA	1 - 1.5 - 2.5	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = ±20V	±250	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 48V, VGS = 0V	1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = 40V, VGS = 0V, TJ = 55 °C	10	µA
On-State Drain Current	ID(ON)	VDS = 5V, VGS = 10V	22	A
On-State Drain Current	ID(ON)	VGS = 4.5V, ID = 8A	59 - 75
Drain-Source On-State Resistance	RDS(ON)	VGS = 10V, ID = 10A	42 - 55	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS = 4.5V, ID = 8A	59 - 75	mΩ
Forward Transconductance	gfs	VDS = 10V, ID = 10A	14	S
Input Capacitance	Ciss	VGS = 0V, VDS = 25V, f = 1MHz	587	pF
Output Capacitance	Coss	VGS = 0V, VDS = 25V, f = 1MHz	80	pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = 25V, f = 1MHz	46	pF
Total Gate Charge	Qg	VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A	12.5	nC
Gate-Source Charge	Qgs	VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A	1.8	nC
Gate-Drain Charge	Qg	VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A	3.7	nC
Turn-On Delay Time	td(on)	VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω	11	nS
Rise Time	tr	VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω	8	nS
Turn-Off Delay Time	td(off)	VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω	19	nS
Fall Time	tf	VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω	6	nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS		22	A
Forward Voltage	VSD	IF = 1A, VGS = 0V	1	V