N Channel Power MOSFET PAKER BSS138K with Low RDS on and High Breakdown Voltage in SOT23 Package
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Product Description
Product Overview
The BSS138K is an N-Channel Enhancement Mode Power MOSFET designed for various applications including LED lighting, ON/OFF switching, and networking. It features low RDS(on) at VGS=10V and 3.3V logic level control, housed in a SOT23 package. This Pb-Free, RoHS Compliant component offers efficient performance with its high breakdown voltage and continuous drain current capabilities.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Package: SOT-23
- Certifications: PbFree, RoHS Compliant
- Packing Quantity: 3000
- Packing Description: Tape/Reel, 7" reel, EIA-481-1
- Marking: J1.Y
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Gate-Source Voltage | 12 | V | ||||
| Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 50 | V | |||
| Maximum Junction Temperature | 150 | C | ||||
| Storage Temperature Range | -50 | 150 | C | |||
| Pulse Drain Current | TA=25C | 1.8 | A | |||
| Continuous Drain Current | TA=25C | 0.5 | A | |||
| Continuous Drain Current | TA=70C | 0.4 | A | |||
| Maximum Power Dissipation | TA=25C | 0.3 | W | |||
| Maximum Power Dissipation | TA=70C | 0.2 | W | |||
| Thermal Resistance Junction-Ambient | 400 | C/W | ||||
| Gate Threshold Voltage | VDS=VGS, ID=250A | 0.6 | 1.0 | 1.5 | V | |
| Zero Gate Voltage Drain Current | VDS=50V, VGS=0V (TA=25) | 1 | A | |||
| Zero Gate Voltage Drain Current | VDS=40V, VGS=0V (TA=125) | 100 | A | |||
| Gate-Body Leakage Current | VGS=12V, VDS=0V | 100 | nA | |||
| Drain-Source On-State Resistance | VGS=3.3V, ID=0.2A | 4 | ||||
| Drain-Source On-State Resistance | VGS=4.5V, ID=0.3A | 2.5 | ||||
| Drain-Source On-State Resistance | VGS=10V, ID=0.5A | 1.2 | ||||
| Input Capacitance | VDS=30V, VGS=0V, f=1MHz | 23 | pF | |||
| Output Capacitance | VDS=30V, VGS=0V, f=1MHz | 3.8 | pF | |||
| Reverse Transfer Capacitance | VDS=30V, VGS=0V, f=1MHz | 1.5 | pF | |||
| Total Gate Charge | VDS=30V, ID=0.5A, VGS=10V | 0.91 | nC | |||
| Gate Source Charge | VDS=30V, ID=0.5A, VGS=10V | 0.18 | nC | |||
| Gate Drain Charge | VDS=30V, ID=0.5A, VGS=10V | 0.3 | nC | |||
| Turn on Delay Time | VDD=30V, ID=0.3A, RG=3.3, VGS=10V | 3.5 | ns | |||
| Turn on Rise Time | VDD=30V, ID=0.3A, RG=3.3, VGS=10V | 6 | ns | |||
| Turn Off Delay Time | VDD=30V, ID=0.3A, RG=3.3, VGS=10V | 5.9 | ns | |||
| Turn Off Fall Time | VDD=30V, ID=0.3A, RG=3.3, VGS=10V | 20 | ns | |||
| Source drain current(Body Diode) | TA=25 | 0.2 | A | |||
| Forward on voltage | Tj=25, ISD=0.5A, VGS=0V | 0.78 | 1.2 | V |
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