PANJIT BCP53-16-AU R2 000A1 Low Vce Saturation Silicon PNP Epitaxial Transistor with High DC Current Gain

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Product Description

Product Overview

The PBCP53-16-AU is a Silicon PNP epitaxial type transistor designed for low Vce(sat) applications, offering a maximum of -0.4V at Ic/Ib = -500mA / -50mA. It features high collector current capability, excellent DC current gain characteristics, and is AEC-Q101 qualified. This transistor is compliant with EU RoHS 2.0 and manufactured using a green molding compound as per IEC 61249 Standard. Its NPN complement is the BCP56-16-AU.

Product Attributes

Brand: Panjit International Inc.
Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC 61249 Standard (Green molding compound)
Material: Silicon PNP epitaxial type
Package: SOT-223
Origin: Not specified in the provided text.
Color: Not specified in the provided text.

Technical Specifications

Parameter	Symbol	Limit	Units	Test Condition	Min.	Typ.	Max.
Maximum Ratings	VCBO	-120	V
	VCEO	-100	V
	VEBO	-6	V
	IC (DC)	-1	A
	ICP (Pulse)	-3	A
	PD	2.6	W
	TJ, TSTG	-55~150	C
Thermal Characteristics	TJ	150	C
Thermal Characteristics	RJA	48	C/W	Note: Mounted on FR4 PCB at 1 inch square copper pad.
OFF Characteristics	BVCEO	-100	V	IC= -10mA, IB= 0A	-100	-	-
	BVCBO	-120	V	IC= -0.1mA, IE= 0A	-120	-	-
	BVEBO	-6	V	IE= -0.1mA, IC= 0A	-6	-	-
	ICBO	-100	nA	VCB= -80V, IE= 0A	-	-	-100
	IEBO	-100	nA	VEB= -6V, IC= 0A	-	-	-100
ON Characteristics	hFE			VCE= -2V, IC= -10mA	100	-	-
				VCE= -2V, IC= -150mA	100	-	250
				VCE= -2V, IC= -500mA	40	-	-
	VCE(SAT)		mV	IC= -0.1A, IB= -10mA	-	-90	-150
				IC= -0.5A, IB= -50mA	-	-260	-400
				IC= -1A, IB= -0.1A	-	-430	-600
Other Electrical Characteristics	VBE(SAT)	-1.0	V	IC= -0.1A, IB= -10mA	-	-	-1.0
Other Electrical Characteristics	VBE(SAT)	-1.1	V	IC= -0.5A, IB= -50mA	-	-	-1.1
Transition Frequency	fT	100	MHz	VCE= -5V, IE= 50mA	100	-	-
Collector Output Capacitance	COB	10	pF	VCB= -10V, IE= 0A, f=1MHz	-	-	10