Cascode GaN transistor NITRIDE YHJ-65P150TK offering high current capability and low switching losses
Product Overview
The YHJ-65P150TK is a normally-off GaN High Electron Mobility Transistor (HEMT) device utilizing a cascode configuration. It offers high breakdown voltage, high current capability, and high operating speed, making it suitable for high-power applications. Its features include gate drive voltage compatibility (-20V to +20V), pin-to-pin compatibility with silicon (SJ) and SiC MOSFETs, high operating frequency, and low Qrr. Applications include Switch Mode Power Supplies (SMPS), AC-DC/DC-DC Converters, and Motor Drives.
Product Attributes
- Brand: YHJ
- Origin: Jiangxi Yuhongjin Chip Technology Co., Ltd.
- Material: GaN HEMT
- Package Type: TO-220
Technical Specifications
| Part Number | VDSS (min.) | RDS(ON) (typ.) | QG (typ.) | Package | Description |
| YHJ-65P150TK | 650V | 150m | 12nC | TO-220 | Cascode GaN HEMT |
| Symbol | Parameter | Conditions | Value (min.) | Value (typ.) | Value (max.) | Unit |
| VDSS | Drain-source voltage | VGS=0V | 650 | - | - | V |
| VGS(th) | Gate threshold voltage | VDS= 10V ,ID=1mA | 1.7 | 2.2 | - | V |
| RDS(on) | Static drain-source on- resistance | VGS=6V, ID=5A, TJ=25C | - | 150 | 185 | m |
| RDS(on) | Static drain-source on- resistance | VGS=6V, ID=5A, TJ=150C | - | 302 | - | m |
| IDSS | Drain-source leakage current | VGS =0V, VDS =650V, TJ=25C | - | 2.5 | 28 | A |
| IDSS | Drain-source leakage current | VGS =0V, VDS =650V, TJ=150C | - | 10 | - | A |
| IGSS | Gate-to-source forward leakage current | VGS=20V | - | - | 100 | nA |
| IGSS | Gate-to-source reverse leakage current | VGS=-20V | - | - | -100 | nA |
| CISS | Input capacitance | VGS=0V, VDS=400V, f=1MHz | - | 505 | - | pF |
| COSS | Output capacitance | - | - | 29 | - | pF |
| CRSS | Reverse transfer capacitance | - | - | 1 | - | pF |
| QG | Gate charge | VGS=0~10V, VDS=400V, IDS =5A | - | 10 | - | nC |
| QGS | Gate-source charge | - | - | 4.3 | - | nC |
| QOSS | Output charge | VGS=0V, VDS=0~400V | - | 36 | - | nC |
| tD(on) | Turn-on delay time | VDS=400V, VGS=0 to 10V, IDS=2A ,RG=25 | - | 9 | - | ns |
| tD(off) | Turn-off delay time | - | - | 20 | - | ns |
| QRR | Reverse recovery charge | IS=5A, VDS =400V | - | 46 | - | nC |
| Symbol | Parameter | Value | Unit |
| VDSS | Drain-source voltage | 650 | V |
| V(TR)DSS | Transient drain to source voltagea | 800 | V |
| VGSS | Gate-source voltage | -20V ~ +20V | - |
| ID | Drain current (continuous) at TC = 25C operation | 12 | A |
| ID | Drain current (continuous) at TC = 100C operation | 8 | A |
| IDM | Pulsed drain current (pulse width: 10s) | 21 | A |
| TC | Operating temperature Case | -55 to +150 | C |
| TJ | Junction temperature | -55 to +150 | C |
| TS | Storage temperature | -55 to +150 | C |
| TSOLD | Soldering peak temperatureb | 260 | C |
| RJA | Thermal resistance junction-ambient | 5.4 | C/W |
| RJC | Thermal resistance junction-case | 1.05 | C/W |
a. In off-state, spike duty cycle D
b. For 10 sec., 1.6mm from the case
Package Outline Dimensions
YHJ-65P150TK (TO-220)
Tube Package Information
50pcs/tube, 1000pcs/box, 5000pcs/carton
Change Log
Version 0.1, Date: July 28, 2024, Description: Initial version
Note: YHJ semiconductor reserves the right to revise products and/or specifications without notice.
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