Collector emitter voltage 40 volt PANJIT MMBT2222A NPN epitaxial silicon planar transistor for switching

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Product Description

MMBT2222A NPN General Purpose Switching Transistor

The MMBT2222A is an NPN epitaxial silicon planar design transistor suitable for general purpose switching applications. It offers a collector-emitter voltage of 40V and a continuous collector current of 600mA. This lead-free component complies with EU RoHS 2.0 and features a green molding compound. It is supplied in a SOT-23 package.

Product Attributes

Brand: Panjit International Inc. (implied by disclaimer and part numbering)
Material: NPN epitaxial silicon, planar design
Color: Green (molding compound)
Certifications: EU RoHS 2.0 compliant, IEC 61249 standard (Green molding compound)
Package: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026

Technical Specifications

Parameter	Symbol	Value	Units	Conditions
Collector-Emitter Voltage	VCEO	40	V
Collector-Base Voltage	VCBO	75	V
Emitter-Base Voltage	VEBO	6	V
Collector Current - Continuous	IC	600	mA
Max. Power Dissipation (Note 1)	PTOT	225	mW	Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in.
Thermal Resistance, Junction to Ambient	RJA	556	C/W
Junction Temperature	TJ	-55 to +150	C
Storage Temperature	TSTG	-55 to +150	C
Collector-Emitter Breakdown Voltage	V(BR)CEO	40	V	IC = 0.1mA, IB = 0
Collector-Base Breakdown Voltage	V(BR)CBO	75	V	IE = 0.1mA, IC = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	6	V	IC = 0.1mA, IE = 0
Collector Cut-off Current	ICEX	0.3	A	VCE = 30V, VBE = 0.3V
Collector Cut-off Current	ICBO	10	nA	VCE = 60V, TJ = 150C
Emitter Cut-off Current	IEBO	10	nA	VEB = 6V, IC = 0
DC Current Gain	hFE	100 to 300		IC = 150mA, VCE = 10V
Collector-Emitter Saturation Voltage	VCE(SAT)	0.3	V	IC = 500mA, IB = 50mA (Note 2)
Collector-Emitter Saturation Voltage	VCE(SAT)	1.0	V	IC = 150mA, IB = 15mA (Note 2)
Base-Emitter Saturation Voltage	VBE(SAT)	1.2	V	IC = 500mA, IB = 50mA (Note 2)
Base-Emitter Saturation Voltage	VBE(SAT)	0.6	V	IC = 150mA, IB = 15mA (Note 2)
Collector-Base Capacitance	Cobo	8	pF	VCB = 10V, f = 1MHz, IE = 0
Base-Emitter Capacitance	Cebo	25	pF	VBE = 0.5V, f = 1MHz, IC = 0
Turn-On Time	ts	25	ns	VCC = 3V, IB1 = 15mA, IC = 150mA (Note 2)
Storage Time	ts	25	ns	VCC = 3V, IB1 = 15mA, IC = 150mA (Note 2)
Fall Time	tf	60	ns	VCC = 3V, IB1 = 15mA, IC = 150mA (Note 2)