Integrated bias resistor digital transistor onsemi SMUN5235DW1T1G for compact and circuit applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This series of digital transistors, including MUN5235DW1, NSBC123JDXV6, and NSBC123JDP6, integrates NPN transistors with a monolithic bias resistor network. Designed to replace discrete transistors and external resistors, these devices simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring a single device with integrated bias resistors.
Product Attributes
- Brand: onsemi
- Certifications: AEC-Q101 Qualified (S and NSV Prefix), PPAP Capable (S and NSV Prefix), RoHS Compliant, Pb-Free, Halogen Free/BFR Free
- Material: Not specified
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Device | Package | R1 | R2 | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | Collector-Base Cutoff Current (ICBO) | Collector-Emitter Cutoff Current (ICEO) | Emitter-Base Cutoff Current (IEBO) | Collector-Base Breakdown Voltage (V(BR)CBO) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Input Voltage (Off) (Vi(off)) | Input Voltage (On) (Vi(on)) | Output Voltage (On) (VOL) | Output Voltage (Off) (VOH) | Input Resistor (R1) | Resistor Ratio (R1/R2) |
| MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 | SOT-363 | 2.2 k | 47 k | 50 Vdc | 50 Vdc | 100 mAdc | 12 Vdc | 5 Vdc | 100 nAdc | 500 nAdc | 0.2 mAdc | 50 Vdc | 50 Vdc | 80 - 140 | 0.25 V | 0.6 Vdc | 0.8 Vdc | 0.2 Vdc | 4.9 Vdc | 1.5 - 2.9 k | 0.038 - 0.056 |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina