Integrated bias resistor transistor onsemi MUN5316DW1T1G suitable for replacement of single devices in circuits

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Product Description

Product Overview

This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. Designed to replace external bias resistors, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring replacement of single devices and their external resistor bias networks.

Product Attributes

Brand: Semiconductor Components Industries, LLC (onsemi)
Certifications: AEC-Q101 Qualified and PPAP Capable (S and NSV Prefix), RoHS Compliant, PbFree, Halogen Free/BFR Free
Origin: USA (implied by onsemi)

Technical Specifications

Device	Package	CollectorBase Voltage (VCBO)	CollectorEmitter Voltage (VCEO)	Collector Current (IC)	Input Forward Voltage (VIN(fwd))	Input Reverse Voltage (VIN(rev))	R1	Shipping
MUN5316DW1	SOT363	50 Vdc	50 Vdc	100 mAdc	30 Vdc	6 Vdc (NPN), 5 Vdc (PNP)	3.3 - 4.7 - 6.1 k	3,000 / Tape & Reel
NSVMUN5316DW1	SOT363	50 Vdc	50 Vdc	100 mAdc	30 Vdc	6 Vdc (NPN), 5 Vdc (PNP)	3.3 - 4.7 - 6.1 k	3,000 / Tape & Reel
NSBC143TPDXV6	SOT563	50 Vdc	50 Vdc	100 mAdc	30 Vdc	6 Vdc (NPN), 5 Vdc (PNP)	3.3 - 4.7 - 6.1 k	4,000 / Tape & Reel
NSVBC143TPDXV6	SOT563	50 Vdc	50 Vdc	100 mAdc	30 Vdc	6 Vdc (NPN), 5 Vdc (PNP)	3.3 - 4.7 - 6.1 k	4,000 / Tape & Reel

nAdc nAdc mAdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc

Characteristic	Symbol	Min	Typ	Max	Unit	Notes
CollectorBase Cutoff Current	ICBO	-	-	100	(VCB = 50 V, IE = 0)
CollectorEmitter Cutoff Current	ICEO	-	-	500	(VCE = 50 V, IB = 0)
EmitterBase Cutoff Current	IEBO	-	-	1.9	(VEB = 6.0 V, IC = 0)
CollectorBase Breakdown Voltage	V(BR)CBO	50	-	-	(IC = 10 A, IE = 0)
CollectorEmitter Breakdown Voltage	V(BR)CEO	50	-	-	(IC = 2.0 mA, IB = 0)
DC Current Gain	hFE	160	350	-	-	(IC = 5.0 mA, VCE = 10 V)
CollectorEmitter Saturation Voltage	VCE(sat)	-	-	0.25	(IC = 10 mA, IB = 0.3 mA)
Input Voltage (off)	Vi(off)	-	0.6 (NPN) 0.58 (PNP)	-	(VCE = 5.0 V, IC = 100 A)
Input Voltage (on)	Vi(on)	-	0.9 (NPN) 1.0 (PNP)	-	(VCE = 0.2 V, IC = 10 mA)
Output Voltage (on)	VOL	-	-	0.2	(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
Output Voltage (off)	VOH	4.9	-	-	(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)

Characteristic	Symbol	MUN5316DW1 (SOT363) Max Unit	NSBC143TPDXV6 (SOT563) Max Unit	Notes
Total Device Dissipation (One Junction Heated)	PD	187 mW (@25C) 1.5 mW/C (Derate)	357 mW (@25C) 2.9 mW/C (Derate)	(Note 1)
Total Device Dissipation (Both Junctions Heated)	PD	250 mW (@25C) 2.0 mW/C (Derate)	500 mW (@25C) 4.0 mW/C (Derate)	(Note 3)
Thermal Resistance, Junction to Ambient	RJA	670 C/W (One Junction) 490 C/W (Both Junctions)	350 C/W (One Junction) 250 C/W (Both Junctions)	(Note 1, 2)
Junction and Storage Temperature Range	TJ, Tstg	55 to +150 C		-