Collector emitter voltage 40V NPN transistor PANJIT MMBT2222A R1 00001 general purpose switching device
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Product Description
MMBT2222A NPN General Purpose Switching Transistor
The MMBT2222A is an NPN epitaxial silicon planar design general purpose switching transistor. It features a collector-emitter voltage of 40V and a continuous collector current of 600mA. This lead-free component complies with EU RoHS 2011/65/EU directive and is made with a green molding compound as per IEC61249 Std. (Halogen Free). It is supplied in a SOT-23 plastic package with solderable terminals per MIL-STD-750, Method 2026.
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN epitaxial silicon, planar design
- Color: Green molding compound (Halogen Free)
- Certifications: EU RoHS 2011/65/EU directive compliant
- Case: SOT-23, Plastic
- Marking: M2A
Technical Specifications
| Parameter | Symbol | Value | Units | Notes |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Collector-Base Voltage | VCBO | 75 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current - Continuous | IC | 600 | mA | |
| Max. Power Dissipation | PTOT | 225 | mW | Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. |
| Thermal Resistance, Junction to Ambient | RJA | 556 | OC/W | |
| Junction Temperature | TJ | -55 to +150 | OC | |
| Storage Temperature | TSTG | -55 to +150 | OC | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 0.1mA, IB = 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 75 | V | IE = 0.5mA, IC = 0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IC = 0.1mA, IE = 0 |
| Collector Cut-off Current | ICEX | 0.3 | uA | VCE = 60V, VBE = 0.3V |
| Collector Cut-off Current | ICBO | 10 | nA | VCE = 60V, TJ = 150 OC |
| Emitter Cut-off Current | IEBO | 100 | nA | VEB = 0.3V, IC = 0 |
| DC Current Gain | hFE | 100 (Typ) | IC = 10mA, VCE = 10V | |
| DC Current Gain | hFE | 50 (Min) | IC = 500mA, VCE = 10V | |
| DC Current Gain | hFE | 300 (Typ) | IC = 100mA, VCE = 10V | |
| DC Current Gain | hFE | 50 (Typ) | IC = 10mA, VCE = 1V | |
| DC Current Gain | hFE | 10 (Typ) | IC = 500mA, VCE = 1V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.1 | V | IC = 150mA, IB = 15mA (Typ) |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 | V | IC = 500mA, IB = 50mA (Typ) |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.9 | V | IC = 150mA, IB = 15mA (Typ) |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC = 500mA, IB = 50mA (Typ) |
| Collector-Base Capacitance | Cobo | 8 | pF | VCB = 10V, f = 1MHz |
| Base-Emitter Capacitance | Cebo | 25 | pF | VEB = 0.5V, f = 1MHz |
| Delay Time | td | 10 | ns | VCC = 3V, IC = 150mA, IB1 = 15mA |
| Rise Time | tr | 25 | ns | VCC = 3V, IC = 150mA, IB1 = 15mA |
| Storage Time | ts | 25 | ns | VCC = 30V, IC = 150mA, IB1 = 15mA, IB2 = -15mA |
| Fall Time | tf | 60 | ns | VCC = 30V, IC = 150mA, IB1 = 15mA, IB2 = -15mA |
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