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PANJIT MMBT5551-AU R1 000A2 NPN Transistor 160V Collector Emitter Voltage and 600mA Collector Current

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The MMBT5551-AU is an NPN Silicon planar design high voltage transistor. It features a collector-emitter voltage of 160V and a continuous collector current of 600mA. This AEC-Q101 qualified component is lead-free in compliance with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 standard. It is housed in a SOT-23 plastic package.

Product Attributes

  • Brand: Panjit International Inc.
  • Product Name: MMBT5551-AU
  • Type: NPN High Voltage Transistor
  • Material: Silicon, Planar Design
  • Color: Green (molding compound)
  • Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant
  • Package: SOT-23, Plastic
  • Origin: Not specified

Technical Specifications

ParameterSymbolValueUnitsTest Condition
Collector-Emitter VoltageVCEO160V
Collector-Base VoltageVCBO180V
Emitter-Base VoltageVEBO6V
Collector Current ContinuousIC600mA
Max Power Dissipation (Note 1)PD250mW(TA=25 oC)
Thermal Resistance, Junction to Ambient (Note 1)RJA325OC/W(TA=25 oC)
Operating Junction Temperature and Storage Temperature RangeTJ,TSTG-55 to +150OC
Collector-Emitter Breakdown VoltageV(BR)CEO160VIC=1mA,IB=0A
Collector-Base Breakdown VoltageV(BR)CBO180VIC=100uA,IE=0A
Emitter-Base Breakdown VoltageV(BR)EBO6VIE=10uA,IC=0A
Collector-Base Cut-off CurrentICBO50nAVCB=120V,IE=0A
Emitter-Base Cut-off CurrentIEBO50nAVEB=4V,IC=0A
DC Current GainhFE80-250-VCE=5V,IC=1mA to 50mA
Collector-Emitter Saturation VoltageVCE(SAT)200mVIC=50mA,IB=5mA
Base-Emitter Saturation VoltageVBE(SAT)1.1VIC=50mA,IB=5mA
Collector-Base CapacitanceCBO6pFVCB=10V,IE=0A,f=1MHz
Emitter-Base CapacitanceCEBO30pFVEB=500mV,IC=0A,f=1MHz
Transition FrequencyFT300MHzIC=10mA,VCE=10V,f=100MHz

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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