Digital transistor onsemi MMUN2214LT1G with integrated bias resistors designed to reduce board space
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MOQ:
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Product Description
Product Description
This series of digital transistors (BRT) integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. They are designed to replace individual components, simplifying circuit design, reducing board space, and decreasing component count. These devices are suitable for applications requiring unique site and control change requirements, with S and NSV prefixes qualifying for automotive and other specific applications. They are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV prefixes)
- Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Device | Part Marking | Package | CollectorBase Voltage (VCBO) | CollectorEmitter Voltage (VCEO) | Collector Current (IC) Continuous | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| MUN2214T1G, SMUN2214T1G | 8D | SC59 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| MMUN2214LT1G, SMMUN2214LT1G | A8D | SOT23 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| MUN5214T1G, SMUN5214T1G | 8D | SC70/SOT323 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| DTC114YET1G, SDTC114YET1G | 8D | SC75 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| DTC114YM3T5G, NSVDTC114YM3T5G | 8D | SOT723 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| NSBC114YF3T5G | J | SOT1123 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| Characteristic | Symbol | Min | Typ | Max | Unit |
| CollectorBase Cutoff Current | ICBO | 100 | nAdc | ||
| CollectorEmitter Cutoff Current | ICEO | 500 | nAdc | ||
| EmitterBase Cutoff Current | IEBO | 0.2 | mAdc | ||
| CollectorBase Breakdown Voltage | V(BR)CBO | 50 | Vdc | ||
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | ||
| DC Current Gain | hFE | 80 | 140 | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | ||
| Input Voltage (off) | Vi(off) | 0.7 | 0.5 | Vdc | |
| Input Voltage (on) | Vi(on) | 1.4 | 0.8 | Vdc | |
| Output Voltage (on) | VOL | 0.2 | Vdc | ||
| Output Voltage (off) | VOH | 4.9 | Vdc | ||
| Input Resistor | R1 | 7.0 | 10 | 13 | k |
| Resistor Ratio | R1/R2 | 0.17 | 0.21 | 0.25 |
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