PANJIT BC847BS R1 00001 General Purpose NPN Dual Transistor with SOT 363 Package and Lead Free Materials
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Product Description
BC847BS NPN General Purpose Dual Transistor
The BC847BS is an NPN epitaxial silicon planar design general purpose dual transistor designed for amplifier applications. It is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free). The transistor is housed in a SOT-363 plastic package with solderable terminals per MIL-STD-750, Method 2026.
Product Attributes
- Brand: Panjit International Inc. (implied by disclaimer)
- Material: NPN epitaxial silicon, planar design
- Color: Green molding compound (Halogen Free)
- Certifications: EU RoHS 2011/65/EU directive compliant
Technical Specifications
| Parameter | Symbol | Value | Units | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| POWER ABSOLUTE MAXIMUM RATINGS | |||||||
| Collector - Emitter Voltage | VCEO | 45 | V | ||||
| Collector - Base Voltage | VCBO | 50 | V | ||||
| Emitter - Base Voltage | VEBO | 6 | V | ||||
| Collector Current - Continuous | IC | 100 | mA | ||||
| Total Device Dissipation Per Device (FR-5 Board) | PD | 150 | mW | TA=25OC | |||
| Derate above 25OC | 3 | mW/OC | |||||
| Thermal Resistance, Junction to Ambient | RJA | 550 | OC/W | (Note 2) | |||
| Junction Temperature | TJ | -55 to 150 | OC | ||||
| Storage Temperature | TSTG | -55 to 150 | OC | ||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Collector - Emitter Breakdown Voltage | V(BR)CEO | 45 | V | IC=10mA | |||
| Collector - Emitter Breakdown Voltage | V(BR)CES | 50 | V | IC=10A, VEB=0 | |||
| Collector - Base Breakdown Voltage | V(BR)CBO | 50 | V | IC=10A | |||
| Emitter - Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=1A | |||
| Collector Cutoff Current | ICBO | nA | VCB=30V | 15 | |||
| A | VCB=30V, TA=150 OC | 5 | |||||
| DC Current Gain | hFE | 200 - 450 | - | IC=2mA, VCE=5V | |||
| Collector - Emitter Saturation Voltage | VCE(SAT) | V | IC=10mA, IB=0.5mA | 0.25 | |||
| V | IC=100mA, IB=5mA | 0.6 | |||||
| Base - Emitter Saturation Voltage | VBE(SAT) | V | IC=10mA, IB=0.5mA | 0.6 | 0.8 | ||
| V | IC=100mA, IB=5mA | 0.9 | 1 | ||||
| Base - Emitter Voltage | VBE(ON) | mV | IC=2mA, VCE=5V | 580 | 660 | ||
| mV | IC=10mA, VCE=5V | 700 | 770 | ||||
| SMALL-SIGNAL CHARACTERISTICS | |||||||
| Current-Gain-Bandwidth Product | fT | 100 | MHZ | IC=10mA,VCE=5Vdc,f=100MHZ | |||
| Output Capacitance | Cobo | pF | VCB=10V,f=1MHZ | 4.5 | |||
| Noise Figure | NF | dB | IC=0.2mA,VCE=5Vdc, RS=2k ,f=1.0kHZ , BW=200H Z | 10 | |||
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