NPN transistor PANJIT MMBT3904 R1 00101 with 300MHz transition frequency and EU RoHS 2 certification

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

MMBT3904 NPN General Purpose Switching Transistor

The MMBT3904 is an NPN epitaxial silicon planar design general-purpose switching transistor. It offers a collector-emitter voltage of 40V and a collector current of 200mA, with a transition frequency exceeding 300MHz. This device is lead-free and complies with EU RoHS 2.0 standards, making it suitable for various electronic applications requiring reliable switching performance.

Product Attributes

Brand: Panjit International Inc.
Material: NPN epitaxial silicon, planar design
Color: Green molding compound
Certifications: EU RoHS 2.0
Case: SOT-23
Terminals: Solderable per MIL-STD-750, Method 2026

Technical Specifications

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Breakdown Voltage	V(BR)CEO	IC = 0.1mA, IB = 0	40			V
	V(BR)CBO	IC = 10uA, IE = 0	60			V
	V(BR)EBO	IE = 10uA, IC = 0	6			V
Cut-off Base Current	IBL	VCE = 30V, VEB = 0.3V			20	nA
Collector Cut-off Current	ICEX	VCE = 30V, VEB = 0.3V			50	nA
DC Current Gain	hFE	IC = 0.1mA, VCE = 1V	30
		IC = 1.0mA, VCE = 1V	70	100
		IC = 10mA, VCE = 1V	100	200
		IC = 50mA, VCE = 1V	60
		IC = 100mA, VCE = 1V	40
Saturation Voltage	VCE(SAT)	IC = 10mA, IB = 1mA		0.200	0.300	V
Saturation Voltage	VCE(SAT)	IC = 50mA, IB = 5mA		0.300	0.500	V
Base Saturation Voltage	VBE(SAT)	IC = 10mA, IB = 1mA		0.560	0.700	V
Base Saturation Voltage	VBE(SAT)	IC = 50mA, IB = 5mA		0.580	0.900	V
Capacitance	Cobo	VCB = 10V, f = 1MHz		4.0		pF
Capacitance	Cebo	VEB = 0.5V, f = 1MHz		0.8		pF
Switching Time	tr	VCC = 3V, IC = 10mA, IB1 = 1mA		35		ns
Switching Time	tf	VCC = 3V, IC = 10mA, IB1 = 1mA		50		ns
Power Dissipation	PTOT	Note 1			0.225	W
Thermal Resistance	RJA	Note 1		555		C/W
Junction Temperature	TJ		-55		150	C
Storage Temperature	TSTG		-55		150	C