300V NPN transistor PANJIT MMBTA42 R1 00001 with 250mW power dissipation and RoHS 2 0 compliant design
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MMBTA42 is an NPN silicon planar high voltage transistor designed for various applications requiring a 300V breakdown voltage and a power dissipation of 250mW. It features a lead-free design compliant with EU RoHS 2.0 and uses a green molding compound. The transistor is housed in a SOT-23 plastic package.
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN silicon, planar design
- Color: Green molding compound
- Certifications: EU RoHS 2.0 compliant
Technical Specifications
| Parameter | Symbol | Value | Units | Notes |
| Collector-Emitter Voltage | V CEO | 300 | V | |
| Collector Current (Continuous) | I C | 500 | mA | |
| Max Power Dissipation | P TOT | 250 | mW | Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. |
| Collector-Emitter Breakdown Voltage | V (BR)CEO | 300 | V | I C=1mA, I B=0 |
| Collector-Base Breakdown Voltage | V (BR)CBO | 300 | V | I C=100A, I E=0 |
| Emitter-Base Breakdown Voltage | V (BR)EBO | 6 | V | I E=100A, I C=0 |
| Collector Cut-off Current | I CBO | 100 | nA | V CB=200V, I E=0V |
| Emitter Cut-off Current | I EBO | 100 | nA | V CE=6V, I C=0 |
| DC Current Gain | hFE | 25 - 40 | V CE=10V, I C=1.0mA to 30mA | |
| Collector-Emitter Saturation Voltage | V CE(SAT) | 0.5 | V | I C=20mA, I B=2mA |
| Base-Emitter Saturation Voltage | V BE(SAT) | 0.9 | V | I C=20mA, I B=2mA |
| Collector-Base Capacitance | C CB | 3 | pF | V CB=20V, I E=0, f=1MHz |
| Collector Gain - Bandwidth Product | f T | 50 | MHz | I C=10mA, V CE=20V, f=100MHz |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina