Monolithic bias resistor network integrated digital transistor onsemi SMUN2111T1G for circuit design

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Product Description

Product Overview

This series of digital transistors (BRT) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. Designed to replace discrete components and their associated bias networks, BRTs simplify circuit design, reduce board space, and decrease component count. They are suitable for applications requiring a single device with integrated biasing.

Product Attributes

Brand: onsemi
Certifications: AEC-Q101 Qualified (S and NSV Prefix), PPAP Capable (S and NSV Prefix), PbFree, Halogen Free/BFR Free, RoHS Compliant
Material: Monolithic Bias Resistor Network

Technical Specifications

Device	Part Marking	Package	CollectorBase Voltage (VCBO)	CollectorEmitter Voltage (VCEO)	Collector Current (IC)	Input Forward Voltage (VIN(fwd))	Input Reverse Voltage (VIN(rev))	DC Current Gain (hFE)	CollectorEmitter Saturation Voltage (VCE(sat))	Input Resistor (R1)
MUN2111T1G, SMUN2111T1G	6A	SC59	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ
SMUN2111T3G	6A	SC59	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ
MMUN2111LT1G, SMMUN2111LT1G	A6A	SOT23	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ
MMUN2111LT3G, SMMUN2111LT3G	A6A	SOT23	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ
MUN5111T1G, SMUN5111T1G	6A	SC70/SOT323	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ
DTA114EET1G, NSVDTA114EET1G	6A	SC75	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ
DTA114EM3T5G, NSVDTA114EM3T5G	6A	SOT723	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ
NSBA114EF3T5G	F	SOT1123	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	35 - 60	≤ 0.25 Vdc	7.0 - 13 kΩ