Switching NH NTS036N03S N Channel Enhancement Mode Power MOSFET Suitable for Battery Management Systems
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Delivery Time:
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Product Description
Product Overview
The NTS036N03S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability in demanding applications. Typical uses include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF
- Model ID: NTS036N03S
- Package: TO-252
- Material: Pb-Free, RoHS Compliant
- Weight: Approx. 0.321 Grams (0.01132 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | ||
|---|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||||
| Drain-Source Voltage | Min. @ Tj | VDS | 30 | -- | -- | V | ||
| Continuous Drain Current | Min. @ Ta | ID | 120 | -- | -- | A | ||
| RDS(ON) Type | @ 10V | RDS(ON) | -- | 2.80 | 4.00 | m | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||||
| Drain-Source Voltage | -- | VDS | -- | -- | 30 | V | ||
| Gate-Source Voltage | -- | VGS | -- | -- | 20 | V | ||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 120 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 96 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 175 | IDM | -- | -- | 480 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 75 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.50 | -- | W/ | ||
| Power Dissipation Derating Factor | Ta= 100 | DF | -- | -- | 38 | W | ||
| Junction Temperature | -- | TJ | -55 | -- | 175 | |||
| Storage Temperature Range | -- | TSTD | -55 | -- | 175 | |||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 32 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 15 V | EAS | -- | 256 | -- | mJ | ||
| Single Pulse Avalanche Energy (Note 1) | IAS= 32 A,RG= 10 Starting Tj=25 ,VG = 10 V | EAS | -- | -- | 256 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 60.0 | -- | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 2.0 | -- | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||||
| Static off Characteristics | ||||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 30 | -- | -- | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.029 | -- | V/ | ||
| Drain-Source Leakage Current | VDS= 30 V,VGS=0V | I DSS | -- | -- | 1 | uA | ||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | -- | 100 | nA | ||
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | -- | 28 | -- | S | ||
| Static on Characteristics | ||||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 1.0 | 1.8 | 2.6 | V | ||
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | -- | 2.80 | 4.00 | m | ||
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | -- | 3.22 | 4.60 | m | ||
| Dynamic Characteristics | ||||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 1.70 | -- | |||
| Input Capacitance | VDS= 15 V | C iss | -- | 2800.0 | -- | pF | ||
| Output Capacitance | VGS= 0 V | C oss | -- | 290.0 | -- | pF | ||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 265.0 | -- | pF | ||
| Switching Paramters (Test Circuit & Waveform See Fig.14) | ||||||||
| Turn-On Delay Time | VDS= 15 V | t d(on) | -- | 15.0 | -- | ns | ||
| Turn-On Rise Time | VGS= 10 V | t r | -- | 36.0 | -- | ns | ||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 44.0 | -- | ns | ||
| Turn-Off Rise Time | RG= 10 | t f | -- | 22.0 | -- | ns | ||
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | ||||||||
| Total Gate Charge | VDS= 15 V | Q g | -- | 50.0 | -- | nC | ||
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 5.0 | -- | nC | ||
| Gate-Drain Charge | ID= 20 A | Q gd | -- | 10.0 | -- | nC | ||
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||||
| Max. Diode Forward Current | -- | I S | -- | -- | 120 | A | ||
| Max. Pulsed Forward Current | -- | I SM | -- | -- | 420 | A | ||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.86 | 1.2 | V | ||
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | -- | 55 | -- | ns | ||
| Reverse Recovery Charge | VGS= 10 V,VDS= 15 V | Q rr | -- | 40.0 | -- | uC | ||
| OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS | ||||||||
| Dimension | Unit | Min. | Typ. | Max. | Unit | Min. | Typ. | Max. |
| A | mm | 6.100 | -- | 7.100 | inches | 0.240 | -- | 0.280 |
| B | mm | 4.800 | -- | 5.800 | inches | 0.189 | -- | 0.228 |
| C | mm | 1.950 | -- | 2.550 | inches | 0.077 | -- | 0.100 |
| D | mm | 0.350 | -- | 0.750 | inches | 0.014 | -- | 0.030 |
| E | mm | 9.250 | -- | 10.750 | inches | 0.364 | -- | 0.423 |
| F | mm | 5.600 | -- | 6.600 | inches | 0.220 | -- | 0.260 |
| G | mm | 2.500 | -- | 3.100 | inches | 0.098 | -- | 0.122 |
| H | mm | 0.650 | -- | 1.050 | inches | 0.026 | -- | 0.041 |
| J | mm | 2.100 | -- | 2.500 | inches | 0.083 | -- | 0.098 |
| L | mm | 1.000 | -- | 1.400 | inches | 0.039 | -- | 0.055 |
| M | mm | 0.350 | -- | 0.750 | inches | 0.014 | -- | 0.030 |
| PACKING INFORMATION | ||||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |||
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 | |||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina