N-Channel Power MOSFET NH NPS4N65S Featuring Low RDS ON and High EAS for Switching Power Supplies
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The Niuhang NPS4N65S is an N-Channel Enhancement Mode Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for reduced power loss, low gate charge for faster switching, and high EAS for enhanced reliability. This MOSFET is ideal for AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies.
Product Attributes
- Brand: Niuhang
- Model ID: NPS4N65S
- Product Line Code: FF (subject to change)
- Date Code: YWW (subject to change)
- Internal Code: LLWWF
- Trademark: NH
- Package: TO-252
- Certifications: RoHS COMPLIANT, Pb-Free
- Weight: App. 0.321 Grams (0.01132 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VGS=0V,ID=250uA | BV DSS | 650 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.772 | -- | V/ |
| Drain-Source Leakage Current | VDS= 650 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 2 A,VDS= 15 V | gfs | -- | 1.65 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 2 A,VGS= 10 V | R DS(ON) | -- | 2.3 | 2.8 | |
| Drain-Source On Resistance | ID= 2 A,VGS= 5.5 V | R DS(ON) | -- | 2.5 | 3.1 | |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 3.00 | -- | |
| Input Capacitance | VDS= 50 V | C iss | -- | 571.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 56.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 12.0 | -- | pF |
| Turn-On Delay Time | VDS= 325 V | t d(on) | -- | 14.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 16.0 | -- | ns |
| Turn-Off Delay Time | RG= 10 | t d(off) | -- | 32.0 | -- | ns |
| Turn-Off Rise Time | t f | -- | 11.0 | -- | ns | |
| Total Gate Charge | VDS= 325 V | Q g | -- | 15.5 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 3.0 | -- | nC |
| Gate-Drain Charge | ID= 2 A | Q gd | -- | 6.8 | -- | nC |
| Max. Diode Forward Current | I S | -- | -- | 4 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 14 | A | |
| Diode Forward Voltage | ID= 2 A,VGS=0V | V SD | -- | 0.70 | 1.0 | V |
| Reverse Recovery Time | ID= 2 A,di/dt= 100 A/us | t rr | -- | 252 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 325 V | Q rr | -- | 1206.0 | -- | nC |
| Drain-Source Voltage (VDS Min.@Tj) | VDS | 650 | V | |||
| Continuous Drain Current (ID Min.@Ta) | ID | 4 | A | |||
| RDS(ON) Type@10V | RDS(ON) | 2.30 | ||||
| Drain-Source Voltage | (Absolute Maximum Ratings) | VDS | -- | -- | 650 | V |
| Gate-Source Voltage | (Absolute Maximum Ratings) | VGS | -- | -- | 30 | V |
| Continuous Drain Current | Ta= 25 | ID | -- | -- | 4 | A |
| Continuous Drain Current | Ta= 100 | ID | -- | -- | 3 | A |
| Drain Current-Pulsed | TJ | IDM | -- | -- | 16 | A |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 75 | W |
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.60 | -- | W/ |
| Junction Temperature | TJ | -55 | -- | 150 | ||
| Storage Temperature Range | TSTD | -55 | -- | 150 | ||
| Avalanche Current,Single Pulse | L= 0.4 mH | IAS | -- | -- | 6 | A |
| Single Pulse Avalanche Energy | L= 0.4 mH | EAS | -- | -- | 7 | mJ |
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 100.0 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 1.7 | -- | /W |
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