Power MOSFET NH NTH068N068C N-Channel Enhancement Mode for Printed Circuit Board Control Applications
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Product Description
Product Overview
The NTH068N068C is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON), low gate charge, and high EAS for enhanced reliability. This MOSFET is ideal for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and Uninterruptible Power Supplies (UPS). Its robust design ensures performance in various power management scenarios.
Product Attributes
- Brand: Niuhang (NH Trademark)
- Model: NTH068N068C
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package: TO-220C
- Certifications: RoHS COMPLIANT, Pb-Frce
- Origin: Guangdong Niuhang Specification Electronic Technology Co., Ltd.
Technical Specifications
| Specification | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 68 | V |
| Continuous Drain Current (ID) @ Ta=25 | 91 | A |
| Continuous Drain Current (ID) @ Ta=100 | 73 | A |
| Drain Current-Pulsed (IDM) | 364 | A |
| Maximum Power Dissipation (PD) @ Ta=25 | 136 | W |
| Power Dissipation Derating Factor (DF) @ Ta=100 | 68 | W |
| Power Dissipation Derating Factor (DF) Above 25 | 0.91 | W/ |
| Junction Temperature (TJ) | -55 to 175 | |
| Storage Temperature Range (TSTD) | -55 to 175 | |
| Avalanche Current, Single Pulse (IAS) (L=0.5 mH) | 40 | A |
| Single Pulse Avalanche Energy (EAS) (L=0.5 mH, VDD=34 V) | 400 | mJ |
| Thermal Resistance Junction To Ambient (RJA) (Still Air) | 62.0 | /W |
| Thermal Resistance Junction-Case (RJC) (1 in 2 FR-4 Board, 2oz) | 1.1 | /W |
| Drain-Source Breakdown Voltage (BV DSS) @ ID=250uA, VGS=0V | 68 | V |
| Bvdss Temperature Coefficient | 0.065 | V/ |
| Drain-Source Leakage Current (IDSS) @ VDS=68V, VGS=0V | 1 | uA |
| Gate-Body Leakage Current (IGSS) @ VGS=20V, VDS=0V | 100 | nA |
| Forward Transconductance (gfs) @ ID=20A, VDS=5V | 33 | S |
| Gate Threshold Voltage (VGS(TH)) @ ID=250uA | 2.0 - 4.0 | V |
| Drain-Source On Resistance (RDS(ON)) @ ID=20A, VGS=10V | 5.20 - 6.80 | m |
| Drain-Source On Resistance (RDS(ON)) @ ID=20A, VGS=4.5V | 5.98 - 9.11 | m |
| Gate Resistance (Rg) @ Freq.=1MHz | 0.70 | |
| Input Capacitance (Ciss) @ VDS=34V | 4723.0 | pF |
| Output Capacitance (Coss) @ VGS=0V | 225.0 | pF |
| Reverse Transfer Capacitance (Crss) @ F=1MHz | 207.0 | pF |
| Turn-On Delay Time (td(on)) @ VDS=34V | 15.0 | ns |
| Turn-On Rise Time (tr) @ VGS=10V | 33.0 | ns |
| Turn-Off Delay Time (td(off)) @ RL=1.2 | 59.0 | ns |
| Turn-Off Rise Time (tf) @ RG=10 | 12.0 | ns |
| Total Gate Charge (Qg) @ VDS=34V | 76.0 | nC |
| Gate-Source Charge (Qgs) @ VGS=10V | 16.0 | nC |
| Gate-Drain Charge (Qgd) @ ID=20A | 20.0 | nC |
| Max. Diode Forward Current (Is) | 91 | A |
| Max. Pulsed Forward Current (Ism) | 318 | A |
| Diode Forward Voltage (VsD) @ ID=20A, VGS=0V | 0.85 - 1.2 | V |
| Reverse Recovery Time (trr) @ ID=20A, di/dt=100 A/us | 29 | ns |
| Reverse Recovery Charge (Qrr) @ VGS=10V, VDS=34V | 35.0 | uC |
| Weight | 2.057 | Grams |
| Weight | 0.07255 | Ounce |
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