Low RDS ON N Channel MOSFET NH NPS2N60S Designed for High Frequency Circuits and Adaptors Applications
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Product Description
Product Overview
The NPS2N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, this MOSFET features low RDS(ON) for reduced power loss, low gate charge for high-speed switching, and high EAS for enhanced robustness. It is suitable for various applications including AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. The product is 100% UIS and RG tested, ensuring high quality and performance.
Product Attributes
- Brand: Niuhang (NH Trademark)
- Origin: Guangdong, China
- Certifications: RoHS Compliant, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | Tj | VDS | 600 | V | ||
| Continuous Drain Current | Ta= 25 | ID | 2 | A | ||
| RDS(ON) Type | @10V | RDS(ON) | 4.20 | |||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 2 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 1.3 | A | ||
| Drain Current-Pulsed (Note 1) | TJ | IDM | 8 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 35 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 0.28 | W/ | ||
| Power Dissipation Derating Factor | Ta= 100 | DF | 0.28 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | 14 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 300 V | EAS | 50 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 100.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 3.60 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 600 | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.712 | V/ | ||
| Drain-Source Leakage Current | VDS= 600 V,VGS=0V | I DSS | 1 | uA | ||
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | 100 | nA | ||
| Forward Transconductance | ID= 1 A,VDS= 15 V | gfs | 1.8 | S | ||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 1 A,VGS= 10 V | R DS(ON) | 4.20 | 5.00 | ||
| Drain-Source On Resistance | ID= 1 A,VGS= 4.5 V | R DS(ON) | 4.83 | 6.70 | ||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 4.50 | |||
| Input Capacitance | VDS= 25 V | C iss | 335.0 | pF | ||
| Output Capacitance | VGS= 0 V | C oss | 35.0 | pF | ||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 6.0 | pF | ||
| Turn-On Delay Time | VDS= 300 V | t d(on) | 12.0 | ns | ||
| Turn-On Rise Time | VGS= 10 V | t r | 13.0 | ns | ||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | 30.0 | ns | ||
| Turn-Off Rise Time | RG= 10 | t f | 14.0 | ns | ||
| Total Gate Charge | VDS= 300 V | Q g | 10.0 | nC | ||
| Gate-Source Charge | VGS= 10 V | Q gs | 1.6 | nC | ||
| Gate-Drain Charge | ID= 1 A | Q gd | 5.0 | nC | ||
| Max. Diode Forward Current | I S | 2 | A | |||
| Max. Pulsed Forward Current | I SM | 7 | A | |||
| Diode Forward Voltage | ID= 1 A,VGS=0V | V SD | 1.08 | 1.5 | V | |
| Reverse Recovery Time | ID= 1 A,di/dt= 100 A/us | t rr | 187 | ns | ||
| Reverse Recovery Charge | VGS= 10 V,VDS= 300 V | Q rr | 610.0 | uC | ||
| Weight | App. 0.321 | (0.01132 | Gram/Ounce) | |||
| Package: TO-252 | ||||||
| Model ID: NPS2N60S | ||||||
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