Surface mount Schottky diode onsemi MBRA140T3G offering low forward voltage drop and compact design

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Product Description

Product Overview

The MBRA140T3/D is a surface mount Schottky power rectifier employing a large area metal-to-silicon Schottky Barrier principle. Its state-of-the-art epitaxial construction with oxide passivation and metal overlay contact makes it ideal for low voltage, high frequency rectification, or as free wheeling and polarity diodes in space-constrained surface mount applications. Key advantages include a very low forward voltage drop and a compact, easily handled package.

Product Attributes

Brand: ON Semiconductor
Certifications: AECQ101 Qualified (NRVBA & SBRA Prefix), PPAP Capable (NRVBA & SBRA Prefix), PbFree, Halogen Free/BFR Free, RoHS Compliant
Material: Epoxy, Molded
Package: SMA (Surface Mount)

Technical Specifications

Characteristic	Symbol	Value	Unit
Peak Repetitive Reverse Voltage	VRRM, VRWM, VR	40	V
Average Rectified Forward Current (TC = 95C)	IO	1.0	A
Peak Repetitive Forward Current (TC = 100C, 20 kHz)	IFRM	2.0	A
Non-Repetitive Peak Surge Current (60 Hz, Halfwave)	IFSM	30	A
Storage Temperature	Tstg	55 to +150	C
Operating Junction Temperature	TJ	55 to +125	C
Voltage Rate of Change	dv/dt	10,000	V/s
Thermal Resistance, Junction-to-Lead (Note 1)	RJL	35	C/W
Thermal Resistance, Junction-to-Ambient (Note 1)	RJA	86	C/W
Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25C)	VF	0.55	V
Maximum Instantaneous Forward Voltage (IF = 2.0 A, TJ = 25C)	VF	0.71	V
Maximum Instantaneous Reverse Current (VR = 40 V, TJ = 25C)	IR	0.5	mA
Maximum Instantaneous Reverse Current (VR = 20 V, TJ = 100C)	IR	4.0	mA