P Channel Logic Level Enhancement MOSFET NIKO SEM PV537BA with Halogen Free Lead Free Certification
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The PV537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a robust performance with key features like low on-resistance and high current handling capabilities, making it suitable for power switching and control circuits. This device is Halogen-free & Lead-Free, adhering to environmental standards.
Product Attributes
- Brand: NIKO-SEM
- Model: PV537BA
- Package: SOP-8
- Certifications: Halogen-free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current (TA = 25 °C) | ID | -11 | A | |||
| Continuous Drain Current (TA = 70 °C) | ID | -8.7 | A | |||
| Pulsed Drain Current | IDM | -50 | A | |||
| Avalanche Current | IAS | -35 | A | |||
| Avalanche Energy (L = 0.1mH) | EAS | 61 | mJ | |||
| Power Dissipation (TA = 25 °C) | PD | 1.8 | W | |||
| Power Dissipation (TA = 70 °C) | PD | 1.2 | W | |||
| Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RθJA | (TA = 25 °C, mounted on 1in² FR-4 board with 2oz. Copper, still air) | 68 | °C / W | ||
| Junction-to-Case | RθJC | 25 | °C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1 | -1.6 | -3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±25V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | µA | ||
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | VDS = -20V, VGS = 0V | -10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -11A | 7.2 | 9 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -11A | 10.4 | 14 | mΩ | |
| Forward Transconductance | gfs | VDS = -10V, ID = -11A | 40 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1MHz | 2664 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = -15V, f = 1MHz | 374 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -15V, f = 1MHz | 271 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 3.7 | Ω | ||
| Total Gate Charge | Qg(VGS=-10V) | VDS = -15V , ID = -11A | 56 | nC | ||
| Total Gate Charge | Qg(VGS=-4.5V) | VDS = -15V , ID = -11A | 28 | nC | ||
| Gate-Source Charge | Qgs | VDS = -15V , ID = -11A | 9 | nC | ||
| Gate-Drain Charge | Qgd | VDS = -15V , ID = -11A | 13 | nC | ||
| Turn-On Delay Time | td(on) | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 22 | nS | ||
| Rise Time | tr | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 26 | nS | ||
| Turn-Off Delay Time | td(off) | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 102 | nS | ||
| Fall Time | tf | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 75 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | -11 | A | |||
| Forward Voltage | VSD | IF = -11A, VGS = 0V | -1.3 | V | ||
| Reverse Recovery Time | trr | IF=-11A, dI/dt=100A/µs | 26 | nS | ||
| Reverse Recovery Charge | Qrr | IF=-11A, dI/dt=100A/µs | 14 | µC | ||
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