AEC Q101 qualified triple diode onsemi BAS21TMR6T1G in compact SC 74 package for space saving designs

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Product Description

Product Overview

The BAS21TMR6 houses three high-voltage switching diodes in a SC-74 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. It offers reduced board space and is suitable for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable. The devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

Product Attributes

Brand: onsemi
Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant
Material: Pb-Free, Halogen Free/BFR Free
Package: SC-74

Technical Specifications

Characteristic	Symbol	Value	Unit	Notes
MAXIMUM RATINGS (EACH DIODE)
Reverse Voltage	VR	250	Vdc
Forward Current	IF	200	mAdc
Peak Forward Surge Current	IFM(surge)	625	mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation FR-5 Board	PD	311	mW	TA = 25C; Derate above 25C: 2.5 mW/C
Thermal Resistance, Junction-to-Ambient FR-5 Board	RJA	402	C/W
Total Device Dissipation Alumina Substrate	PD	347	mW	TA = 25C; Derate above 25C: 2.8 mW/C
Thermal Resistance, Junction-to-Ambient Alumina Substrate	RJA	360	C/W
Junction and Storage Temperature	TJ, Tstg	-55 to +150	C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Reverse Voltage Leakage Current (VR = 200 Vdc)	IR	-	0.1	µAdc
Reverse Voltage Leakage Current (VR = 200 Vdc, TJ = 150°C)	IR	-	100	µAdc
Reverse Breakdown Voltage (IBR = 100 µAdc)	V(BR)	250	Vdc
Forward Voltage (IF = 100 mAdc)	VF	-	1.0	Vdc
Forward Voltage (IF = 200 mAdc)	VF	-	1.25	Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz)	CD	-	5.0	pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100 Ω)	trr	-	50	ns