P Channel MOSFET with Low RDS on and Optimized Switching NIKO SEM PM597BA in Compact SOT 23 Package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The PM597BA is a P-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed with SOT-23(S) packaging. It offers low RDS(on) for minimized conduction losses and an optimized gate charge for reduced switching losses. This transistor is Pb-Free, Halogen-Free, and RoHS compliant, making it suitable for protection circuits and logic/load switch applications.

Product Attributes

Brand: NIKO-SEM
Package: SOT-23(S)
Certifications: PbFree, Halogen Free, RoHS compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Limit	Unit
PRODUCT SUMMARY
V(BR)DSS	V(BR)DSS		-20	V
RDS(ON)	RDS(ON)		30	m
ID	ID		-5.3	A
ABSOLUTE MAXIMUM RATINGS
Gate-Source Voltage	VGS		12	V
Continuous Drain Current (TA = 25 C)	ID	TA = 25 C	-5.3	A
Continuous Drain Current (TA = 70 C)	ID	TA = 70 C	-4.3	A
Pulsed Drain Current	IDM		-16	A
Power Dissipation (TA = 25 C)	PD	TA = 25 C	1.4	W
Power Dissipation (TA = 70 C)	PD	TA = 70 C	0.9	W
Operating Junction & Storage Temperature Range	Tj, Tstg		-55 to 150	C
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = -250A	-20	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = -250A	-0.7 to -1.3	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = 12V	100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = -16V, VGS = 0V	-1	A
Zero Gate Voltage Drain Current (TJ = 55 C)	IDSS	VDS = -10V, VGS = 0V, TJ = 55 C	-10	A
Drain-Source On-State Resistance	RDS(ON)	VGS = -2.5V, ID = -3.5A	40 to 58	m
Drain-Source On-State Resistance	RDS(ON)	VGS = -4.5V, ID = -3.5A	30 to 43	m
Drain-Source On-State Resistance	RDS(ON)	VGS = -10V, ID = -3.5A	25 to 30	m
Forward Transconductance	gfs	VDS = -5V, ID = -3.5A	16	S
Input Capacitance	Ciss	VGS = 0V, VDS = -10V, f = 1MHz	801	pF
Output Capacitance	Coss	VGS = 0V, VDS = -10V, f = 1MHz	115	pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = -10V, f = 1MHz	92	pF
Total Gate Charge	Qg	VDS = -10V , VGS =-4.5V, ID = -3.5A	8.7	nC
Total Gate Charge	Qg	VDS = -10V , VGS =-2.5V, ID = -3.5A	5.4	nC
Gate-Source Charge	Qgs	VDS = -10V , VGS =-4.5V, ID = -3.5A	1.2	nC
Gate-Drain Charge	Qgd	VDS = -10V , VGS =-4.5V, ID = -3.5A	2.6	nC
Turn-On Delay Time	td(on)	VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6	19	nS
Rise Time	tr	VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6	30	nS
Turn-Off Delay Time	td(off)	VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6	55	nS
Fall Time	tf	VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6	20	nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS		-1	A
Forward Voltage	VSD	IF = -3.5A, VGS = 0V	-1.3	V
Reverse Recovery Time	trr	IF = -3.5A, dlF/dt = 100A / S	24	nS
Reverse Recovery Charge	Qrr	IF = -3.5A, dlF/dt = 100A / S	6	nC