NIKO SEM PE537BA P Channel Logic Level Enhancement Mode Transistor Designed for Compact and Circuits

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Product Description

Product Overview

The PE537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers advantages such as logic-level gate drive and a PDFN 3x3P package, making it suitable for space-constrained designs. This transistor is Halogen-free & Lead-Free.

Product Attributes

Brand: NIKO-SEM
Model: PE537BA
Package: PDFN 3x3P
Certifications: Halogen-free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Limit	Unit
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS		-30	V
Gate-Source Voltage	VGS		±20	V
Continuous Drain Current	ID	TC = 25 °C	-33	A
Continuous Drain Current	ID	TC = 100 °C	-22	A
Continuous Drain Current	ID	TA = 25 °C	-12	A
Continuous Drain Current	ID	TA = 70 °C	-9.6	A
Pulsed Drain Current	IDM		-100	A
Avalanche Current	IAS		-34	A
Avalanche Energy	EAS	L = 0.1mH	57.8	mJ
Power Dissipation	PD	TC = 25 °C	16.7	W
Power Dissipation	PD	TC = 100 °C	6.7	W
Power Dissipation	PD	TA = 25 °C	2	W
Power Dissipation	PD	TA = 70 °C	1.3	W
Junction & Storage Temperature Range	Tj, Tstg		-55 to 150	°C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient	RθJA		60	°C / W
Junction-to-Case	RθJC		7.5
PRODUCT SUMMARY
Breakdown Voltage	V(BR)DSS		-30	V
On-State Resistance	RDS(ON)		8.5	mΩ
Continuous Drain Current	ID		-33	A
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = -250µA	-30	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = -250µA	-1.6	-3	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = ±20V	±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = -24V, VGS = 0V	-1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = -20V, VGS = 0V, TJ = 55 °C	-10	µA
Drain-Source On-State Resistance	RDS(ON)	VGS = -10V, ID = -12A	8.5	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS = -4.5V, ID = -12A	14	mΩ
Forward Transconductance	gfs	VDS = -10V, ID = -12A	35	S
DYNAMIC CHARACTERISTICS
Input Capacitance	Ciss	VGS = 0V, VDS = -15V, f = 1MHz	2803	pF
Output Capacitance	Coss		371	pF
Reverse Transfer Capacitance	Crss		286	pF
Gate Resistance	Rg	VGS = 0V, VDS = 0V, f = 1MHz	4	Ω
Total Gate Charge	Qg(VGS=-10V)	VDS = -15V , ID = -12A	56	nC
Total Gate Charge	Qg(VGS=-4.5V)		28	nC
Gate-Source Charge	Qgs		8
Gate-Drain Charge	Qgd		12
Turn-On Delay Time	td(on)	VDD = -10V ID ≈ -12A, VGS = -10V, RGEN = 6Ω	21	nS
Rise Time	tr		25	nS
Turn-Off Delay Time	td(off)		100	nS
Fall Time	tf		73	nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS		-12.8	A
Forward Voltage	VSD	IF = -12A, VGS = 0V	-1.3	V
Reverse Recovery Time	trr	IF=-12A, dI/dt=100A/µs	26	nS
Reverse Recovery Charge	Qrr		14	nC