Power Semiconductor onsemi NGTB40N120FL3WG with Soft Fast Recovery Diode and High Temperature Rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. Key advantages include extremely efficient Trench with Field Stop Technology, a maximum junction temperature of 175C, a soft fast reverse recovery diode, and optimization for high-speed switching.
Typical Applications
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: PbFree Devices
Technical Specifications
| Rating | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | VCES | 1200 | V | |
| IC (@ TC = 25C) | 80 | A | ||
| IC (@ TC = 100C) | 40 | A | ||
| ICM (Pulsed collector current, Tpulse limited by TJmax) | 160 | A | ||
| PD (@ TC = 25C) | 454 | W | ||
| OPERATING TEMPERATURE | TJ | -55 to +175 | C | |
| Tstg | -55 to +175 | C | ||
| THERMAL CHARACTERISTICS | R JC (IGBT) | 0.33 | C/W | junction-to-case |
| R JC (Diode) | 0.61 | C/W | junction-to-case | |
| R JA | 40 | C/W | junction-to-ambient | |
| ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) | V(BR)CES | 1200 | V | VGE = 0 V, IC = 500 A |
| VCEsat (@ IC = 40 A, VGE = 15 V) | 1.7 | V | ||
| VGE(th) | 4.5 - 6.5 | V | VGE = VCE, IC = 400 A | |
| ICES (@ VCE = 1200 V, VGE = 0 V) | 0.5 | mA | ||
| IGES (@ VGE = 20 V, VCE = 0 V) | 200 | nA | ||
| Cies | 4912 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz | |
| Coes | 140 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz | |
| Cres | 80 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz | |
| Qg | 212 | nC | VCE = 600 V, IC = 40 A, VGE = 15 V | |
| Eoff (Turn-off switching loss) | 1.1 | mJ | VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 15 V | |
| DIODE CHARACTERISTIC | VF (@ IF = 40 A) | 3.0 | V | |
| trr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 86 | ns | TJ = 25C | |
| Qrr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 0.56 | C | TJ = 25C | |
| Irm (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 12 | A | TJ = 25C | |
| dIrrm/dt | -210 | A/s | ||
| trr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 136 | ns | TJ = 125C | |
| ORDERING INFORMATION | NGTB40N120FL3WG | TO-247 (Pb-Free) | 30 Units / Rail |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina