Field Stop Trench IGBT onsemi FGHL50T65MQDT Suitable for Solar Inverters UPS ESS and Power Converters
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Product Description
onsemi FGHL50T65MQDT Field Stop Trench IGBT
The onsemi FGHL50T65MQDT is a Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching with tight parameter distribution. Designed for easy parallel operation due to its positive temperature coefficient, this IGBT is suitable for demanding applications like solar inverters, UPS, ESS, PFC, and converters.
Product Attributes
- Brand: onsemi
- Technology: Field Stop Trench IGBT
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | 650 | V | |
| Gate to Emitter Voltage (Transient) | VGES | ±30 | V | |
| Collector Current (@ TC = 25°C) | IC | 80 | A | |
| Collector Current (@ TC = 100°C) | IC | 50 | A | |
| Pulsed Collector Current | ILM | 200 | A | (Note 2) |
| Diode Forward Current (@ TC = 25°C) | IF | 60 | A | |
| Diode Forward Current (@ TC = 100°C) | IF | 50 | A | |
| Maximum Power Dissipation (@ TC = 25°C) | PD | 268 | W | |
| Maximum Power Dissipation (@ TC = 100°C) | PD | 134 | W | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C | |
| Collector to Emitter Saturation Voltage (Typ.) | VCE(sat) | 1.45 | V | IC = 50 A, TJ = 25°C |
| Input Capacitance (Typ.) | Cies | 3335 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Total Gate Charge (Typ.) | Qg | 99 | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Turn-on Delay Time (Typ.) | td(on) | 19 | ns | VCC = 400 V, IC = 25 A, RG = 6 Ω, VGE = 15 V, TJ = 25°C |
| Turn-off Delay Time (Typ.) | td(off) | 96 | ns | VCC = 400 V, IC = 25 A, RG = 6 Ω, VGE = 15 V, TJ = 25°C |
| Diode Forward Voltage (Typ.) | VF | 1.65 | V | IF = 50 A, TJ = 25°C |
| Diode Reverse Recovery Energy (Typ.) | Erec | 65 | µJ | VCE = 400 V, IF = 25 A, diF/dt = 1000 A/µs, TJ = 25°C |
| Diode Reverse Recovery Time (Typ.) | Trr | 44 | ns | VCE = 400 V, IF = 25 A, diF/dt = 1000 A/µs, TJ = 25°C |
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