N Channel Enhancement Mode Transistor NIKO-SEM PK6B2BA Featuring Low On Resistance and Switching

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Product Description

Product Overview

NIKO-SEM PK6B2BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with a low on-resistance and efficient switching characteristics, making it suitable for power management solutions.

Product Attributes

Brand: NIKO-SEM
Model: PK6B2BA
Package: PDFN 5x6P
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Limit	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250A	30	V
Drain-Source Breakdown Voltage	V(BR)DSS
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	1.3	2.3	V


Gate-Body Leakage	IGSS	VDS = 0V, VGS = 20V	100	nA
Gate-Body Leakage	IGSS
Zero Gate Voltage Drain Current	IDSS	VDS = 24V, VGS = 0V	1	A
Zero Gate Voltage Drain Current	IDSS	VDS = 20V, VGS = 0V, TJ = 55 C	10
Drain-Source On-State Resistance	RDS(ON)	VGS = 4.5V, ID = 13A	5.2	8.5	m
		VGS = 10V, ID = 13A	3.9	6


Forward Transconductance	gfs	VDS = 5V, ID = 13A	86	S
Forward Transconductance	gfs
Input Capacitance	Ciss	VGS = 0V, VDS = 15V, f = 1MHz	979	pF
Input Capacitance	Ciss
Output Capacitance	Coss	VGS = 0V, VDS = 15V, f = 1MHz	192	pF
Output Capacitance	Coss
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = 15V, f = 1MHz	117	pF
Reverse Transfer Capacitance	Crss
Gate Resistance	Rg	VGS = 0V, VDS = 0V, f = 1MHz	1.85
Gate Resistance	Rg
Total Gate Charge	Qg	VDS = 15V , VGS = 10V, ID = 13A	21	nC
		VGS = 10V
		VGS = 4.5V	11

Gate-Source Charge	Qgs	VDS = 15V , ID = 13A, VGS = 10V	2.3	nC
Gate-Source Charge	Qgs
Gate-Drain Charge	Qgd	VDS = 15V , ID = 13A, VGS = 10V	6	nC
Gate-Drain Charge	Qgd
Turn-On Delay Time	td(on)	VDS = 15V , ID 13A, VGS = 10V, RGEN =6	17.2	nS
Turn-On Delay Time	td(on)
Rise Time	tr	VDS = 15V , ID 13A, VGS = 10V, RGEN =6	10	nS
Rise Time	tr
Turn-Off Delay Time	td(off)	VDS = 15V , ID 13A, VGS = 10V, RGEN =6	36.8	nS
Turn-Off Delay Time	td(off)
Fall Time	tf	VDS = 15V , ID 13A, VGS = 10V, RGEN =6	10	nS
Fall Time	tf
Continuous Current (Source-Drain Diode)	IS		25	A
Continuous Current (Source-Drain Diode)	IS
Forward Voltage (Source-Drain Diode)	VSD	IF = 13A, VGS = 0V	1.2	V
Forward Voltage (Source-Drain Diode)	VSD
Reverse Recovery Time	trr	IF = 13A, dlF/dt = 100A / S	11.5	nS
Reverse Recovery Time	trr
Reverse Recovery Charge	Qrr	IF = 13A, dlF/dt = 100A / S	2	nC
Reverse Recovery Charge	Qrr
Drain-Source Voltage	VDS		30	V
Drain-Source Voltage	VDS
Gate-Source Voltage	VGS		20	V
Gate-Source Voltage	VGS
Continuous Drain Current	ID	TC = 25 C	52	A
		TC = 100 C	33
		TA = 25 C	18
		TA = 70 C	14
Pulsed Drain Current	IDM		120	A
Pulsed Drain Current	IDM
Avalanche Current	IAS		25	A
Avalanche Current	IAS
Avalanche Energy	EAS	L = 0.1mH	31	mJ
Avalanche Energy	EAS
Power Dissipation	PD	TC = 25 C	31	W
		TC = 100 C	12
		TA = 25 C	3.9	W
		TA = 70 C	2.5
Operating Junction & Storage Temperature Range	Tj, Tstg		-55 to 150	C
Operating Junction & Storage Temperature Range	Tj, Tstg
Junction-to-Ambient Thermal Resistance (Steady-State)	RJA	Mounted on 1in FR-4 board with 2oz. Copper, still air	57	C / W
Junction-to-Ambient Thermal Resistance (Steady-State)	RJA
Junction-to-Case Thermal Resistance (Steady-State)	RJC		4	C / W