Field Stop Trench IGBT 50 Amp 650 Volt onsemi FGH50T65SQD-F155 Suitable for Telecom PFC and ESS Systems
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Product Description
ON Semiconductor FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
The ON Semiconductor FGH50T65SQD is a 650 V, 50 A Field Stop Trench IGBT utilizing novel field stop technology. This series offers optimum performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are essential. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. The device is 100% tested for pulsed collector current (ILM) and offers tight parameter distribution.
Product Attributes
- Brand: ON Semiconductor
- Origin: United States and/or other countries (as part of ON Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VCES | Collector to Emitter Voltage | 650 | V | |||
| VGES | Gate to Emitter Voltage | 20 | V | |||
| Transient Gate to Emitter Voltage | 30 | V | ||||
| IC | Collector Current @ TC = 25C | 100 | A | |||
| Collector Current @ TC = 100C | 50 | A | ||||
| ILM (1) | Pulsed Collector Current @ TC = 25C | 200 | A | |||
| ICM (2) | Pulsed Collector Current | 200 | A | |||
| IF | Diode Forward Current @ TC = 25C | 50 | A | |||
| Diode Forward Current @ TC = 100C | 30 | A | ||||
| IFM | Pulsed Diode Maximum Forward Current | 200 | A | |||
| PD | Maximum Power Dissipation @ TC = 25C | 268 | W | |||
| Maximum Power Dissipation @ TC = 100C | 134 | W | ||||
| TJ | Operating Junction Temperature | -55 | +175 | C | ||
| Tstg | Storage Temperature Range | -55 | +175 | C | ||
| TL | Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds | 300 | C | |||
| Thermal Characteristics | ||||||
| RJC(IGBT) | Thermal Resistance, Junction to Case, Max. | 0.56 | C/W | |||
| RJC(Diode) | Thermal Resistance, Junction to Case, Max. | 1.25 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | C/W | |||
| Electrical Characteristics of the IGBT | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 1 mA | 650 | - | - | V |
| BVCES / TJ | Temperature Coefficient of Breakdown Voltage | IC = 1 mA, Reference to 25C | - | 0.6 | - | V/C |
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0 V | - | - | 250 | A |
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | - | - | 400 | nA |
| VGE(th) | G-E Threshold Voltage | IC = 50 mA, VCE = VGE | 2.6 | 4.5 | 6.4 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 50 A, VGE = 15 V, TC = 25C | - | 1.6 | 2.1 | V |
| Collector to Emitter Saturation Voltage | IC = 50 A, VGE = 15 V, TC = 175C | - | 1.92 | - | V | |
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1MHz | - | 3275 | - | pF |
| Coes | Output Capacitance | - | 84 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 12 | - | pF | |
| td(on) | Turn-On Delay Time | VCC = 400 V, IC = 12.5 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C | - | 22 | - | ns |
| tr | Rise Time | - | 8.7 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 105 | - | ns | |
| tf | Fall Time | - | 2.5 | - | ns | |
| Eon | Turn-On Switching Loss | - | 180 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 45 | - | uJ | |
| Ets | Total Switching Loss | - | 225 | - | uJ | |
| td(on) | Turn-On Delay Time | VCC = 400 V, IC = 25 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25C | - | 19 | - | ns |
| tr | Rise Time | - | 13 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 93 | - | ns | |
| tf | Fall Time | - | 6.4 | - | ns | |
| Eon | Turn-On Switching Loss | - | 410 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 88 | - | uJ | |
| Ets | Total Switching Loss | - | 498 | - | uJ | |
| td(on) | Turn-On Delay Time | VCC = 400 V, IC = 12.5 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 175C | - | 20 | - | ns |
| tr | Rise Time | - | 9.8 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 116 | - | ns | |
| tf | Fall Time | - | 3.5 | - | ns | |
| Eon | Turn-On Switching Loss | - | 402 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 110 | - | uJ | |
| Ets | Total Switching Loss | - | 512 | - | uJ | |
| td(on) | Turn-On Delay Time | VCC = 400 V, IC = 25 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 175C | - | 18 | - | ns |
| tr | Rise Time | - | 15 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 102 | - | ns | |
| tf | Fall Time | - | 8 | - | ns | |
| Eon | Turn-On Switching Loss | - | 641 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 203 | - | uJ | |
| Ets | Total Switching Loss | - | 844 | - | uJ | |
| Qg | Total Gate Charge | VCE = 400 V, IC = 50 A, VGE = 15 V | - | 99 | - | nC |
| Qge | Gate to Emitter Charge | - | 17 | - | nC | |
| Qgc | Gate to Collector Charge | - | 23 | - | nC | |
| Electrical Characteristics of the Diode | ||||||
| VFM | Diode Forward Voltage | IF = 30 A, TC = 25C | - | 2.2 | 2.6 | V |
| Diode Forward Voltage | IF = 30 A, TC = 175C | - | 1.9 | - | V | |
| Erec | Reverse Recovery Energy | IF =30 A, dIF/dt = 200 A/s, TC = 175C | - | 40 | - | uJ |
| trr | Diode Reverse Recovery Time | TC = 25C | - | 31 | - | ns |
| Diode Reverse Recovery Time | TC = 175C | - | 207 | - | ns | |
| Qrr | Diode Reverse Recovery Charge | TC = 25C | - | 48 | - | nC |
| Diode Reverse Recovery Charge | TC = 175C | - | 820 | - | nC | |
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