NIKO-SEM PK600BA N Channel Enhancement Mode FET Designed for Switching and Halogen Free Applications
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Product Description
Product Overview
The PK600BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with key features like low on-resistance and efficient switching characteristics. This transistor is Halogen-Free & Lead-Free, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: NIKO-SEM
- Model: PK600BA
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units | |
| ABSOLUTE MAXIMUM RATINGS | |||||||
| Drain-Source Voltage | VDS | 30 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current | ID | TC = 25 °C | 40 | A | |||
| Continuous Drain Current | ID | TC = 100 °C | 25 | A | |||
| Pulsed Drain Current | IDM | 100 | A | ||||
| Continuous Drain Current | ID | TA = 25 °C | 10.7 | A | |||
| Continuous Drain Current | ID | TA = 70 °C | 8.6 | A | |||
| Avalanche Current | IAS | 18 | A | ||||
| Avalanche Energy | EAS | L = 0.1mH | 16.2 | mJ | |||
| Power Dissipation | PD | TC = 25 °C | 27.8 | W | |||
| Power Dissipation | PD | TC = 100 °C | 11 | W | |||
| Power Dissipation | PD | TA = 25 °C | 2 | W | |||
| Power Dissipation | PD | TA = 70 °C | 1.3 | W | |||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | |||
| THERMAL RESISTANCE RATINGS | |||||||
| Junction-to-Ambient | RθJA | 63 | ° C / W | ||||
| Junction-to-Case | RθJC | 4.5 | ° C / W | ||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 | 1.75 | 2.3 | V | |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID =9A | 9.7 | 13.5 | mΩ | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 9.5A | 7.4 | 9.5 | mΩ | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 9.5A | 62 | S | |||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 486 | 608 | 729 | pF | |
| Output Capacitance | Coss | 89 | 112 | 134 | pF | ||
| Reverse Transfer Capacitance | Crss | 44 | 74 | 104 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.4 | 2.8 | 42 | Ω | |
| Total Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 9.5A | 11 | 14 | 17 | nC | |
| Gate-Source Charge | Qgs | VGS = 4.5V | 1.6 | 2 | 2.4 | nC | |
| Gate-Drain Charge | Qgd | 2.2 | 3.7 | 5.2 | nC | ||
| Turn-On Delay Time | td(on) | VDS = 15V , ID ≈ 9.5A, VGS = 10V, RGEN =6Ω | 13 | nS | |||
| Rise Time | tr | 37 | nS | ||||
| Turn-Off Delay Time | td(off) | 48 | nS | ||||
| Fall Time | tf | 25 | nS | ||||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||||
| Continuous Current | IS | 25 | A | ||||
| Forward Voltage | VSD | IF = 9.5A, VGS = 0V | 1.1 | V | |||
| Reverse Recovery Time | trr | IF = 9.5A, dlF/dt = 100A / μS | 5.9 | 11.7 | 18 | nS | |
| Reverse Recovery Charge | Qrr | 1.5 | 3 | 4.5 | nC | ||
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